Abstract

The interface recombination velocity (IRV) at the interfaces in CdTe/Mg xCd 1- xTe double heterostructures (DHs) is studied using time-resolved photoluminescence. It is found that both thermionic emission and tunneling effects can cause photogenerated carrier loss over or through the Mg xCd 1- xTe barriers, either due to the low barrier potential or the thin barrier thickness. Thus, carrier lifetime measurements reveal only an effective IRV. The thermionic emission induced interface recombination can be distinguished by conducting temperature-dependent carrier lifetime measurements, and the tunneling induced IRV can be quantified by comparing samples with different barrier thicknesses. When both thermionic emission and tunneling effects are suppressed or even eliminated, the actual IRV (due to the recombination at the DH interface trap states) is measured to be ∼1 cm/s, with a very long carrier lifetime of 3.6 μs achieved in the DHs.

Original languageEnglish (US)
JournalIEEE Journal of Photovoltaics
DOIs
StateAccepted/In press - Mar 28 2017

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Thermionic emission
Carrier lifetime
Heterojunctions
thermionic emission
carrier lifetime
Photoluminescence
traps
photoluminescence
conduction
causes
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Ultralow Interface Recombination Velocity (∼1 cm/s) at CdTe/Mg x Cd 1- xTe Heterointerface. / Zhao, Xin Hao; Liu, Shi; Campbell, Calli M.; Yuan, Zhao; Lassise, Maxwell B.; Zhang, Yong-Hang.

In: IEEE Journal of Photovoltaics, 28.03.2017.

Research output: Contribution to journalArticle

Zhao, Xin Hao ; Liu, Shi ; Campbell, Calli M. ; Yuan, Zhao ; Lassise, Maxwell B. ; Zhang, Yong-Hang. / Ultralow Interface Recombination Velocity (∼1 cm/s) at CdTe/Mg x Cd 1- xTe Heterointerface. In: IEEE Journal of Photovoltaics. 2017.
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