Ultrahigh tunability of resistive switching in strongly correlated functional oxide

Milinda Pattanayak, Md Nadim Ferdous Hoque, Yu Che Ho, Wenyue Li, Zhaoyang Fan, Ayrton A. Bernussi

Research output: Contribution to journalArticlepeer-review

Abstract

Vanadium dioxide (VO2) is a strongly correlated material that undergoes reversible resistive switching. However, the underlying mechanism of such resistive switching is still under debate. In this work we report an ultrahigh decrease in the VO2 switching threshold-voltage by more than 35 V and a giant 680% change by modifying the material stoichiometry through tungsten (W) doping. This remarkable effect of chemical doping on the resistive switching characteristics of VO2 illuminates on the fundamental mechanism of the insulator-to-metal transition, which reveals that such abrupt resistive switching is attributed to the electro-thermal actuation process. Furthermore, we report ultralow voltage spontaneous electrical oscillation in W-doped VO2 for the first time. Advances achieved here through the design of a new class of transition metal oxide based strongly correlated materials are of paramount importance for emerging electronics.

Original languageEnglish (US)
Article number101642
JournalApplied Materials Today
Volume30
DOIs
StatePublished - Feb 2023
Externally publishedYes

Keywords

  • Electro-chemical impedance spectroscopy (EIS)
  • Electro-thermal switching
  • Finite-element model simulation
  • Insulator-to-metal transition (IMT)
  • Memristor
  • Negative differential resistance (NDR)
  • Strongly correlated material
  • Vanadium dioxide (VO)
  • W-doping
  • WVO device

ASJC Scopus subject areas

  • Materials Science(all)

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