Ultrahigh tunability of resistive switching in strongly correlated functional oxide

Vanadium dioxide (VO₂) is a strongly correlated material that undergoes reversible resistive switching. However, the underlying mechanism of such resistive switching is still under debate. In this work we report an ultrahigh decrease in the VO₂ switching threshold-voltage by more than 35 V and a giant 680% change by modifying the material stoichiometry through tungsten (W) doping. This remarkable effect of chemical doping on the resistive switching characteristics of VO₂ illuminates on the fundamental mechanism of the insulator-to-metal transition, which reveals that such abrupt resistive switching is attributed to the electro-thermal actuation process. Furthermore, we report ultralow voltage spontaneous electrical oscillation in W-doped VO₂ for the first time. Advances achieved here through the design of a new class of transition metal oxide based strongly correlated materials are of paramount importance for emerging electronics.