Ultrafast Relaxation of Hot Photoexcited Carriers in GaAs

David K. Ferry, Ravindra P. Joshi, Meng Jeng Kann

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

In this paper, we examine a number of factors concerning the relaxation of hot photoexcited electron-hole plasmas in semiconductors. Analytical solutions are utilized to probe the influence of the light-holes on the longer time behavior. The role of the electron-hole interaction and dynamic, self-consistent screening is discussed. Then, the scattering to the satellite L and × valleys is examined in the absence of the inter-carrier interactions. Ensemble Monte Carlo calculations used in this latter approach indicate that the time constant for relaxation of the central valley electrons due to inter-valley scattering cannot be faster than 80-100 fs.

Original languageEnglish (US)
Pages (from-to)2-9
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume942
DOIs
StatePublished - Aug 22 1988

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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