Ultrafast Relaxation of Hot Photoexcited Carriers in GaAs

David K. Ferry; Ravindra P. Joshi; Meng Jeng Kann

doi:10.1117/12.947187

Ultrafast Relaxation of Hot Photoexcited Carriers in GaAs

David K. Ferry, Ravindra P. Joshi, Meng Jeng Kann

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, we examine a number of factors concerning the relaxation of hot photoexcited electron-hole plasmas in semiconductors. Analytical solutions are utilized to probe the influence of the light-holes on the longer time behavior. The role of the electron-hole interaction and dynamic, self-consistent screening is discussed. Then, the scattering to the satellite L and × valleys is examined in the absence of the inter-carrier interactions. Ensemble Monte Carlo calculations used in this latter approach indicate that the time constant for relaxation of the central valley electrons due to inter-valley scattering cannot be faster than 80-100 fs.

Original language	English (US)
Pages (from-to)	2-9
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	942
DOIs	https://doi.org/10.1117/12.947187
State	Published - Aug 22 1988

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.947187

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title = "Ultrafast Relaxation of Hot Photoexcited Carriers in GaAs",

abstract = "In this paper, we examine a number of factors concerning the relaxation of hot photoexcited electron-hole plasmas in semiconductors. Analytical solutions are utilized to probe the influence of the light-holes on the longer time behavior. The role of the electron-hole interaction and dynamic, self-consistent screening is discussed. Then, the scattering to the satellite L and × valleys is examined in the absence of the inter-carrier interactions. Ensemble Monte Carlo calculations used in this latter approach indicate that the time constant for relaxation of the central valley electrons due to inter-valley scattering cannot be faster than 80-100 fs.",

author = "Ferry, {David K.} and Joshi, {Ravindra P.} and Kann, {Meng Jeng}",

note = "Funding Information: This work was supported by the U.S. Office of Naval Research.",

year = "1988",

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Y1 - 1988/8/22

N2 - In this paper, we examine a number of factors concerning the relaxation of hot photoexcited electron-hole plasmas in semiconductors. Analytical solutions are utilized to probe the influence of the light-holes on the longer time behavior. The role of the electron-hole interaction and dynamic, self-consistent screening is discussed. Then, the scattering to the satellite L and × valleys is examined in the absence of the inter-carrier interactions. Ensemble Monte Carlo calculations used in this latter approach indicate that the time constant for relaxation of the central valley electrons due to inter-valley scattering cannot be faster than 80-100 fs.

AB - In this paper, we examine a number of factors concerning the relaxation of hot photoexcited electron-hole plasmas in semiconductors. Analytical solutions are utilized to probe the influence of the light-holes on the longer time behavior. The role of the electron-hole interaction and dynamic, self-consistent screening is discussed. Then, the scattering to the satellite L and × valleys is examined in the absence of the inter-carrier interactions. Ensemble Monte Carlo calculations used in this latter approach indicate that the time constant for relaxation of the central valley electrons due to inter-valley scattering cannot be faster than 80-100 fs.

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Ultrafast Relaxation of Hot Photoexcited Carriers in GaAs

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