Ultrafast Relaxation of Hot Photoexcited Carriers in GaAs

David K. Ferry, Ravindra P. Joshi, Meng Jeng Kann

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this paper, we examine a number of factors concerning the relaxation of hot photoexcited electron-hole plasmas in semiconductors. Analytical solutions are utilized to probe the influence of the light-holes on the longer time behavior. The role of the electron-hole interaction and dynamic, self-consistent screening is discussed. Then, the scattering to the satellite L and × valleys is examined in the absence of the inter-carrier interactions. Ensemble Monte Carlo calculations used in this latter approach indicate that the time constant for relaxation of the central valley electrons due to inter-valley scattering cannot be faster than 80-100 fs.

Original languageEnglish (US)
Pages (from-to)2-9
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume942
DOIs
StatePublished - Aug 22 1988

Fingerprint

Hot carriers
Gallium Arsenide
valleys
Scattering
Electron
Electrons
Hot electrons
Screening
Satellites
Long-time Behavior
Semiconductor materials
Time Constant
scattering
Plasmas
hot electrons
Interaction
time constant
Semiconductors
Analytical Solution
Ensemble

ASJC Scopus subject areas

  • Applied Mathematics
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Computer Science Applications

Cite this

Ultrafast Relaxation of Hot Photoexcited Carriers in GaAs. / Ferry, David K.; Joshi, Ravindra P.; Kann, Meng Jeng.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 942, 22.08.1988, p. 2-9.

Research output: Contribution to journalArticle

Ferry, David K. ; Joshi, Ravindra P. ; Kann, Meng Jeng. / Ultrafast Relaxation of Hot Photoexcited Carriers in GaAs. In: Proceedings of SPIE - The International Society for Optical Engineering. 1988 ; Vol. 942. pp. 2-9.
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