Abstract
The roles of carrier-carrier interactions and non-equilibrium phonons on the ultrafast relaxation of photoexcited carriers in GaAs are examined. At low carrier concentrations, the e-ph interaction is the main energy loss channel for hot electrons, while at high carrier concentrations, the e-h interaction is the primary energy loss channel. This latter result follows from the high e-h scattering rate, the screening of the e-ph interaction, and the high efficiency of hole-phonon scattering through the unscreened deformation potential interaction. The electron energy-loss rates through the e-h interaction increases as the excitation energies and intensities are increased. In two-dimensional systems, the e-h interaction further complicates the problem since the transverse optical modes out are also driven out of equilibrium by their interaction with the holes.
Original language | English (US) |
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Pages (from-to) | 401-406 |
Number of pages | 6 |
Journal | Solid State Electronics |
Volume | 31 |
Issue number | 3-4 |
DOIs | |
State | Published - 1988 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry