Ultrafast relaxation of hot photoexcited carriers in GaAs

D. K. Ferry, M. A. Osman, R. Joshi, M. J. Kann

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3 Scopus citations

Abstract

The roles of carrier-carrier interactions and non-equilibrium phonons on the ultrafast relaxation of photoexcited carriers in GaAs are examined. At low carrier concentrations, the e-ph interaction is the main energy loss channel for hot electrons, while at high carrier concentrations, the e-h interaction is the primary energy loss channel. This latter result follows from the high e-h scattering rate, the screening of the e-ph interaction, and the high efficiency of hole-phonon scattering through the unscreened deformation potential interaction. The electron energy-loss rates through the e-h interaction increases as the excitation energies and intensities are increased. In two-dimensional systems, the e-h interaction further complicates the problem since the transverse optical modes out are also driven out of equilibrium by their interaction with the holes.

Original languageEnglish (US)
Pages (from-to)401-406
Number of pages6
JournalSolid State Electronics
Volume31
Issue number3-4
DOIs
StatePublished - Jan 1 1988

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Ferry, D. K., Osman, M. A., Joshi, R., & Kann, M. J. (1988). Ultrafast relaxation of hot photoexcited carriers in GaAs. Solid State Electronics, 31(3-4), 401-406. https://doi.org/10.1016/0038-1101(88)90306-1