Ultrafast recombination and trapping in amorphous silicon

A. Esser, K. Seibert, H. Kurz, G. N. Parsons, C. Wang, B. N. Davidson, G. Lucovsky, Robert Nemanich

Research output: Contribution to journalArticle

83 Citations (Scopus)

Abstract

We have studied the time-resolved reflectivity and transmission changes induced by femtosecond laser pulses in hydrogenated and nonhydrogenated amorphous silicon thin films, a-Si:H and a-Si, respectively. By varying the pump power, and hence the photoexcited free-carrier densities, by several orders of magnitude, a quadratic, nonradiative recombination process has been identified that controls the density of free carriers on a picosecond time scale for excitation levels above 5×1018 cm-3 in a-Si:H and above 5×1019 cm-3 in a-Si. At lower free-carrier densities, the reflectivity transients display the dynamics expected from a trapping mechanism. We suggest that the process that dominates for the higher free-carrier densities may result from Auger recombination but with a dependence on the carrier density that is different from that which has been observed in crystalline semiconductors where k selection prevails.

Original languageEnglish (US)
Pages (from-to)2879-2884
Number of pages6
JournalPhysical Review B
Volume41
Issue number5
DOIs
StatePublished - 1990
Externally publishedYes

Fingerprint

Amorphous silicon
amorphous silicon
Carrier concentration
trapping
reflectance
Ultrashort pulses
Pumps
pumps
Semiconductor materials
Crystalline materials
Thin films
thin films
pulses
excitation
lasers

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Esser, A., Seibert, K., Kurz, H., Parsons, G. N., Wang, C., Davidson, B. N., ... Nemanich, R. (1990). Ultrafast recombination and trapping in amorphous silicon. Physical Review B, 41(5), 2879-2884. https://doi.org/10.1103/PhysRevB.41.2879

Ultrafast recombination and trapping in amorphous silicon. / Esser, A.; Seibert, K.; Kurz, H.; Parsons, G. N.; Wang, C.; Davidson, B. N.; Lucovsky, G.; Nemanich, Robert.

In: Physical Review B, Vol. 41, No. 5, 1990, p. 2879-2884.

Research output: Contribution to journalArticle

Esser, A, Seibert, K, Kurz, H, Parsons, GN, Wang, C, Davidson, BN, Lucovsky, G & Nemanich, R 1990, 'Ultrafast recombination and trapping in amorphous silicon', Physical Review B, vol. 41, no. 5, pp. 2879-2884. https://doi.org/10.1103/PhysRevB.41.2879
Esser A, Seibert K, Kurz H, Parsons GN, Wang C, Davidson BN et al. Ultrafast recombination and trapping in amorphous silicon. Physical Review B. 1990;41(5):2879-2884. https://doi.org/10.1103/PhysRevB.41.2879
Esser, A. ; Seibert, K. ; Kurz, H. ; Parsons, G. N. ; Wang, C. ; Davidson, B. N. ; Lucovsky, G. ; Nemanich, Robert. / Ultrafast recombination and trapping in amorphous silicon. In: Physical Review B. 1990 ; Vol. 41, No. 5. pp. 2879-2884.
@article{072dcc8036db462b868f9e0aa22a91fa,
title = "Ultrafast recombination and trapping in amorphous silicon",
abstract = "We have studied the time-resolved reflectivity and transmission changes induced by femtosecond laser pulses in hydrogenated and nonhydrogenated amorphous silicon thin films, a-Si:H and a-Si, respectively. By varying the pump power, and hence the photoexcited free-carrier densities, by several orders of magnitude, a quadratic, nonradiative recombination process has been identified that controls the density of free carriers on a picosecond time scale for excitation levels above 5×1018 cm-3 in a-Si:H and above 5×1019 cm-3 in a-Si. At lower free-carrier densities, the reflectivity transients display the dynamics expected from a trapping mechanism. We suggest that the process that dominates for the higher free-carrier densities may result from Auger recombination but with a dependence on the carrier density that is different from that which has been observed in crystalline semiconductors where k selection prevails.",
author = "A. Esser and K. Seibert and H. Kurz and Parsons, {G. N.} and C. Wang and Davidson, {B. N.} and G. Lucovsky and Robert Nemanich",
year = "1990",
doi = "10.1103/PhysRevB.41.2879",
language = "English (US)",
volume = "41",
pages = "2879--2884",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - Ultrafast recombination and trapping in amorphous silicon

AU - Esser, A.

AU - Seibert, K.

AU - Kurz, H.

AU - Parsons, G. N.

AU - Wang, C.

AU - Davidson, B. N.

AU - Lucovsky, G.

AU - Nemanich, Robert

PY - 1990

Y1 - 1990

N2 - We have studied the time-resolved reflectivity and transmission changes induced by femtosecond laser pulses in hydrogenated and nonhydrogenated amorphous silicon thin films, a-Si:H and a-Si, respectively. By varying the pump power, and hence the photoexcited free-carrier densities, by several orders of magnitude, a quadratic, nonradiative recombination process has been identified that controls the density of free carriers on a picosecond time scale for excitation levels above 5×1018 cm-3 in a-Si:H and above 5×1019 cm-3 in a-Si. At lower free-carrier densities, the reflectivity transients display the dynamics expected from a trapping mechanism. We suggest that the process that dominates for the higher free-carrier densities may result from Auger recombination but with a dependence on the carrier density that is different from that which has been observed in crystalline semiconductors where k selection prevails.

AB - We have studied the time-resolved reflectivity and transmission changes induced by femtosecond laser pulses in hydrogenated and nonhydrogenated amorphous silicon thin films, a-Si:H and a-Si, respectively. By varying the pump power, and hence the photoexcited free-carrier densities, by several orders of magnitude, a quadratic, nonradiative recombination process has been identified that controls the density of free carriers on a picosecond time scale for excitation levels above 5×1018 cm-3 in a-Si:H and above 5×1019 cm-3 in a-Si. At lower free-carrier densities, the reflectivity transients display the dynamics expected from a trapping mechanism. We suggest that the process that dominates for the higher free-carrier densities may result from Auger recombination but with a dependence on the carrier density that is different from that which has been observed in crystalline semiconductors where k selection prevails.

UR - http://www.scopus.com/inward/record.url?scp=0001612519&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001612519&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.41.2879

DO - 10.1103/PhysRevB.41.2879

M3 - Article

AN - SCOPUS:0001612519

VL - 41

SP - 2879

EP - 2884

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 5

ER -