Ultrafast recombination and trapping in amorphous silicon

A. Esser, K. Seibert, H. Kurz, G. N. Parsons, C. Wang, B. N. Davidson, G. Lucovsky, R. J. Nemanich

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

We have studied time-resolved reflectivity changes induced by femtosecond laser pulses in a-Si and a-Si:H thin-films. By varying pump-power, we have identified a non-radiative recombination process which controls the free-carrier density, N, on a picosecond time scale for N>5 ×1018cm-3 in a-Si:H and >5×1019 cm-3 in a-Si. At lower carrier densities, transients are controlled by trapping of free-carriers.

Original languageEnglish (US)
Pages (from-to)573-575
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume114
Issue numberPART 2
DOIs
StatePublished - Dec 2 1989
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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