Ultrafast recombination and trapping in amorphous silicon

A. Esser; K. Seibert; H. Kurz; G. N. Parsons; C. Wang; B. N. Davidson; G. Lucovsky; R. J. Nemanich

doi:10.1016/0022-3093(89)90654-6

Ultrafast recombination and trapping in amorphous silicon

A. Esser, K. Seibert, H. Kurz, G. N. Parsons, C. Wang, B. N. Davidson, G. Lucovsky, R. J. Nemanich

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

We have studied time-resolved reflectivity changes induced by femtosecond laser pulses in a-Si and a-Si:H thin-films. By varying pump-power, we have identified a non-radiative recombination process which controls the free-carrier density, N, on a picosecond time scale for N>5 ×10¹⁸cm^-3 in a-Si:H and >5×10¹⁹ cm^-3 in a-Si. At lower carrier densities, transients are controlled by trapping of free-carriers.

Original language	English (US)
Pages (from-to)	573-575
Number of pages	3
Journal	Journal of Non-Crystalline Solids
Volume	114
Issue number	PART 2
DOIs	https://doi.org/10.1016/0022-3093(89)90654-6
State	Published - Dec 2 1989
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/0022-3093(89)90654-6

Cite this

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title = "Ultrafast recombination and trapping in amorphous silicon",

abstract = "We have studied time-resolved reflectivity changes induced by femtosecond laser pulses in a-Si and a-Si:H thin-films. By varying pump-power, we have identified a non-radiative recombination process which controls the free-carrier density, N, on a picosecond time scale for N>5 ×1018cm-3 in a-Si:H and >5×1019 cm-3 in a-Si. At lower carrier densities, transients are controlled by trapping of free-carriers.",

author = "A. Esser and K. Seibert and H. Kurz and Parsons, {G. N.} and C. Wang and Davidson, {B. N.} and G. Lucovsky and Nemanich, {R. J.}",

note = "Funding Information: ACKNOWLEDGEMENTS This work is supported through funding from North Carolina Board of Science and Technology and the state of Nordrhein-Westphalen(F RG). Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

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AU - Esser, A.

AU - Seibert, K.

AU - Kurz, H.

AU - Parsons, G. N.

AU - Wang, C.

AU - Davidson, B. N.

AU - Lucovsky, G.

AU - Nemanich, R. J.

N1 - Funding Information: ACKNOWLEDGEMENTS This work is supported through funding from North Carolina Board of Science and Technology and the state of Nordrhein-Westphalen(F RG). Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 1989/12/2

Y1 - 1989/12/2

N2 - We have studied time-resolved reflectivity changes induced by femtosecond laser pulses in a-Si and a-Si:H thin-films. By varying pump-power, we have identified a non-radiative recombination process which controls the free-carrier density, N, on a picosecond time scale for N>5 ×1018cm-3 in a-Si:H and >5×1019 cm-3 in a-Si. At lower carrier densities, transients are controlled by trapping of free-carriers.

AB - We have studied time-resolved reflectivity changes induced by femtosecond laser pulses in a-Si and a-Si:H thin-films. By varying pump-power, we have identified a non-radiative recombination process which controls the free-carrier density, N, on a picosecond time scale for N>5 ×1018cm-3 in a-Si:H and >5×1019 cm-3 in a-Si. At lower carrier densities, transients are controlled by trapping of free-carriers.

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Ultrafast recombination and trapping in amorphous silicon

Abstract

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