Ultrafast Raman scattering studies of electron transport in a thick InN film grown on GaN

Kong-Thon Tsen, C. Poweleit, D. K. Ferry, Hai Lu, William J. Schaff

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Transient Raman spectroscopy has been used to study electron transport in a thick InN film grown on GaN at T = 300 K. Our experimental results demonstrate that under the subpicosecond laser excitation and probing, electron drift velocity in the Γ valley, which reaches as high as 7.5×10 7 cm/sec, can exceed its steady state value by as much as 40%. Electron velocities have been found to cut off at around 2×10 8 cm/s, significantly larger than those observed for other III-V semiconductors such as GaAs and InP. Our experimental results suggest that InN is potentially an excellent material for ultrafast electronic devices.

Original languageEnglish (US)
Title of host publicationUltrafast Phenomena in Semiconductors and Nanostructure Materials X
DOIs
StatePublished - May 23 2006
EventUltrafast Phenomena in Semiconductors and Nanostructure Materials X - San Jose, CA, United States
Duration: Jan 23 2006Jan 25 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6118
ISSN (Print)0277-786X

Other

OtherUltrafast Phenomena in Semiconductors and Nanostructure Materials X
CountryUnited States
CitySan Jose, CA
Period1/23/061/25/06

Keywords

  • Carrier transport
  • InN
  • Raman spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Ultrafast Raman scattering studies of electron transport in a thick InN film grown on GaN'. Together they form a unique fingerprint.

  • Cite this

    Tsen, K-T., Poweleit, C., Ferry, D. K., Lu, H., & Schaff, W. J. (2006). Ultrafast Raman scattering studies of electron transport in a thick InN film grown on GaN. In Ultrafast Phenomena in Semiconductors and Nanostructure Materials X [61180D] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6118). https://doi.org/10.1117/12.651190