Ultrafast narrow bandwidth modulation of VCSELs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ultrafast modulation of semiconductor lasers at a rate higher than the relaxation-oscillation limited frequency is important for millimeter wave photonics and many other applications. Edge-emitters of compound cavities and other multi-section devices have been employed for such generation in the past. We demonstrate in this paper two methods of modulating VCSELs in the frequency range between 20GHz and 130GHz through a detailed numerical simulation. The first method employs two coupled VCSELs and high frequency oscillation is provided by inter-VCSEL coupling, while the second method utilizes multi-transverse mode beating in a large VCSEL. We show that the mode beating is greatly enhanced by collecting laser output from part of the output facet, providing a relatively easy laser modulation at a frequency larger than 100GHz.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsC. Lei, S.P. Kilcoyne
Pages236-244
Number of pages9
Volume4649
DOIs
StatePublished - 2002
Externally publishedYes
EventVertical-Cavity Surface-Emitting Lasers VI - San Jose, CA, United States
Duration: Jan 23 2002Jan 24 2002

Other

OtherVertical-Cavity Surface-Emitting Lasers VI
CountryUnited States
CitySan Jose, CA
Period1/23/021/24/02

Keywords

  • Microwave photonics
  • Millimeter wave photonics
  • Transverse mode dynamics
  • Ultrafast modulation
  • VCSELs

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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