Ultrafast narrow bandwidth modulation of VCSELs

Cun-Zheng Ning

doi:10.1117/12.469239

Ultrafast narrow bandwidth modulation of VCSELs

Cun-Zheng Ning

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Ultrafast modulation of semiconductor lasers at a rate higher than the relaxation-oscillation limited frequency is important for millimeter wave photonics and many other applications. Edge-emitters of compound cavities and other multi-section devices have been employed for such generation in the past. We demonstrate in this paper two methods of modulating VCSELs in the frequency range between 20GHz and 130GHz through a detailed numerical simulation. The first method employs two coupled VCSELs and high frequency oscillation is provided by inter-VCSEL coupling, while the second method utilizes multi-transverse mode beating in a large VCSEL. We show that the mode beating is greatly enhanced by collecting laser output from part of the output facet, providing a relatively easy laser modulation at a frequency larger than 100GHz.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	C. Lei, S.P. Kilcoyne
Pages	236-244
Number of pages	9
Volume	4649
DOIs	https://doi.org/10.1117/12.469239
State	Published - 2002
Externally published	Yes
Event	Vertical-Cavity Surface-Emitting Lasers VI - San Jose, CA, United States Duration: Jan 23 2002 → Jan 24 2002

Other

Other	Vertical-Cavity Surface-Emitting Lasers VI
Country/Territory	United States
City	San Jose, CA
Period	1/23/02 → 1/24/02

Keywords

Microwave photonics
Millimeter wave photonics
Transverse mode dynamics
Ultrafast modulation
VCSELs

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

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10.1117/12.469239

Cite this

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title = "Ultrafast narrow bandwidth modulation of VCSELs",

abstract = "Ultrafast modulation of semiconductor lasers at a rate higher than the relaxation-oscillation limited frequency is important for millimeter wave photonics and many other applications. Edge-emitters of compound cavities and other multi-section devices have been employed for such generation in the past. We demonstrate in this paper two methods of modulating VCSELs in the frequency range between 20GHz and 130GHz through a detailed numerical simulation. The first method employs two coupled VCSELs and high frequency oscillation is provided by inter-VCSEL coupling, while the second method utilizes multi-transverse mode beating in a large VCSEL. We show that the mode beating is greatly enhanced by collecting laser output from part of the output facet, providing a relatively easy laser modulation at a frequency larger than 100GHz.",

keywords = "Microwave photonics, Millimeter wave photonics, Transverse mode dynamics, Ultrafast modulation, VCSELs",

author = "Cun-Zheng Ning",

year = "2002",

doi = "10.1117/12.469239",

language = "English (US)",

volume = "4649",

pages = "236--244",

editor = "C. Lei and S.P. Kilcoyne",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "Vertical-Cavity Surface-Emitting Lasers VI ; Conference date: 23-01-2002 Through 24-01-2002",

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T1 - Ultrafast narrow bandwidth modulation of VCSELs

AU - Ning, Cun-Zheng

PY - 2002

Y1 - 2002

N2 - Ultrafast modulation of semiconductor lasers at a rate higher than the relaxation-oscillation limited frequency is important for millimeter wave photonics and many other applications. Edge-emitters of compound cavities and other multi-section devices have been employed for such generation in the past. We demonstrate in this paper two methods of modulating VCSELs in the frequency range between 20GHz and 130GHz through a detailed numerical simulation. The first method employs two coupled VCSELs and high frequency oscillation is provided by inter-VCSEL coupling, while the second method utilizes multi-transverse mode beating in a large VCSEL. We show that the mode beating is greatly enhanced by collecting laser output from part of the output facet, providing a relatively easy laser modulation at a frequency larger than 100GHz.

AB - Ultrafast modulation of semiconductor lasers at a rate higher than the relaxation-oscillation limited frequency is important for millimeter wave photonics and many other applications. Edge-emitters of compound cavities and other multi-section devices have been employed for such generation in the past. We demonstrate in this paper two methods of modulating VCSELs in the frequency range between 20GHz and 130GHz through a detailed numerical simulation. The first method employs two coupled VCSELs and high frequency oscillation is provided by inter-VCSEL coupling, while the second method utilizes multi-transverse mode beating in a large VCSEL. We show that the mode beating is greatly enhanced by collecting laser output from part of the output facet, providing a relatively easy laser modulation at a frequency larger than 100GHz.

KW - Microwave photonics

KW - Millimeter wave photonics

KW - Transverse mode dynamics

KW - Ultrafast modulation

KW - VCSELs

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M3 - Conference contribution

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VL - 4649

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EP - 244

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Lei, C.

A2 - Kilcoyne, S.P.

T2 - Vertical-Cavity Surface-Emitting Lasers VI

Y2 - 23 January 2002 through 24 January 2002

ER -

Ultrafast narrow bandwidth modulation of VCSELs

Abstract

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Keywords

ASJC Scopus subject areas

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