Ultrafast measurement of nonequilibrium carrier lifetime in an In0.85Ga0.15As/GaAs relaxed superlattice structure

A. Y. Elezzabi, M. K.Y. Hughes, J. Meyer, S. R. Johnson

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


We investigate the recombination time of nonequilibrium carriers in a highly excited In0.85Ga0.15AsyGaAs relaxed superlattice structure by studying the time-resolved infrared reflectivity at 10.6 mm. Using a cross-correlation infrared reflectivity technique, we have measured a carrier lifetime of 2.6 ± 0.3 ps. Lattice mismatch between In0.85Ga0.15As and GaAs layers gives rise to misfit dislocations, which act as ultrafast recombination centers and result in a dramatic decrease of the carrier lifetime.

Original languageEnglish (US)
Pages (from-to)587-589
Number of pages3
JournalOptics Letters
Issue number6
StatePublished - Mar 15 1995
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


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