We investigate the recombination time of nonequilibrium carriers in a highly excited In0.85Ga0.15AsyGaAs relaxed superlattice structure by studying the time-resolved infrared reflectivity at 10.6 mm. Using a cross-correlation infrared reflectivity technique, we have measured a carrier lifetime of 2.6 ± 0.3 ps. Lattice mismatch between In0.85Ga0.15As and GaAs layers gives rise to misfit dislocations, which act as ultrafast recombination centers and result in a dramatic decrease of the carrier lifetime.
|Original language||English (US)|
|Number of pages||3|
|State||Published - Mar 15 1995|
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics