Ultrafast measurement of nonequilibrium carrier lifetime in an In0.85Ga0.15As/GaAs relaxed superlattice structure

A. Y. Elezzabi; M. K.Y. Hughes; J. Meyer; S. R. Johnson

doi:10.1364/OL.20.000587

Ultrafast measurement of nonequilibrium carrier lifetime in an In_0.85Ga_0.15As/GaAs relaxed superlattice structure

A. Y. Elezzabi, M. K.Y. Hughes, J. Meyer, S. R. Johnson

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We investigate the recombination time of nonequilibrium carriers in a highly excited In0.85Ga0.15AsyGaAs relaxed superlattice structure by studying the time-resolved infrared reflectivity at 10.6 mm. Using a cross-correlation infrared reflectivity technique, we have measured a carrier lifetime of 2.6 ± 0.3 ps. Lattice mismatch between In0.85Ga0.15As and GaAs layers gives rise to misfit dislocations, which act as ultrafast recombination centers and result in a dramatic decrease of the carrier lifetime.

Original language	English (US)
Pages (from-to)	587-589
Number of pages	3
Journal	Optics Letters
Volume	20
Issue number	6
DOIs	https://doi.org/10.1364/OL.20.000587
State	Published - Mar 15 1995
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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title = "Ultrafast measurement of nonequilibrium carrier lifetime in an In0.85Ga0.15As/GaAs relaxed superlattice structure",

abstract = "We investigate the recombination time of nonequilibrium carriers in a highly excited In0.85Ga0.15AsyGaAs relaxed superlattice structure by studying the time-resolved infrared reflectivity at 10.6 mm. Using a cross-correlation infrared reflectivity technique, we have measured a carrier lifetime of 2.6 ± 0.3 ps. Lattice mismatch between In0.85Ga0.15As and GaAs layers gives rise to misfit dislocations, which act as ultrafast recombination centers and result in a dramatic decrease of the carrier lifetime.",

author = "Elezzabi, {A. Y.} and Hughes, {M. K.Y.} and J. Meyer and Johnson, {S. R.}",

year = "1995",

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AU - Elezzabi, A. Y.

AU - Hughes, M. K.Y.

AU - Meyer, J.

AU - Johnson, S. R.

PY - 1995/3/15

Y1 - 1995/3/15

N2 - We investigate the recombination time of nonequilibrium carriers in a highly excited In0.85Ga0.15AsyGaAs relaxed superlattice structure by studying the time-resolved infrared reflectivity at 10.6 mm. Using a cross-correlation infrared reflectivity technique, we have measured a carrier lifetime of 2.6 ± 0.3 ps. Lattice mismatch between In0.85Ga0.15As and GaAs layers gives rise to misfit dislocations, which act as ultrafast recombination centers and result in a dramatic decrease of the carrier lifetime.

AB - We investigate the recombination time of nonequilibrium carriers in a highly excited In0.85Ga0.15AsyGaAs relaxed superlattice structure by studying the time-resolved infrared reflectivity at 10.6 mm. Using a cross-correlation infrared reflectivity technique, we have measured a carrier lifetime of 2.6 ± 0.3 ps. Lattice mismatch between In0.85Ga0.15As and GaAs layers gives rise to misfit dislocations, which act as ultrafast recombination centers and result in a dramatic decrease of the carrier lifetime.

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Ultrafast measurement of nonequilibrium carrier lifetime in an In_0.85Ga_0.15As/GaAs relaxed superlattice structure

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