Ultrafast measurement of nonequilibrium carrier lifetime in an In0.85Ga0.15As/GaAs relaxed superlattice structure

A. Y. Elezzabi, M. K.Y. Hughes, J. Meyer, Shane Johnson

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We investigate the recombination time of nonequilibrium carriers in a highly excited In0.85Ga0.15AsyGaAs relaxed superlattice structure by studying the time-resolved infrared reflectivity at 10.6 mm. Using a cross-correlation infrared reflectivity technique, we have measured a carrier lifetime of 2.6 ± 0.3 ps. Lattice mismatch between In0.85Ga0.15As and GaAs layers gives rise to misfit dislocations, which act as ultrafast recombination centers and result in a dramatic decrease of the carrier lifetime.

Original languageEnglish (US)
Pages (from-to)587-589
Number of pages3
JournalOptics Letters
Volume20
Issue number6
DOIs
StatePublished - Mar 15 1995
Externally publishedYes

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carrier lifetime
reflectance
cross correlation

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Ultrafast measurement of nonequilibrium carrier lifetime in an In0.85Ga0.15As/GaAs relaxed superlattice structure. / Elezzabi, A. Y.; Hughes, M. K.Y.; Meyer, J.; Johnson, Shane.

In: Optics Letters, Vol. 20, No. 6, 15.03.1995, p. 587-589.

Research output: Contribution to journalArticle

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