Abstract
Femtosecond study of the hole relaxation after resonant intersubband excitation in a quasi-two-dimensional semiconductor was carried out. Midinfrared pump-probe studies on p-types Si0.5Ge0.5/Si multiple quantum wells revealed an intersubband relaxation time of 250 fs from the second heavy-hole back to the first heavy-hole subband.
Original language | English (US) |
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Pages (from-to) | 1122-1125 |
Number of pages | 4 |
Journal | Physical Review Letters |
Volume | 86 |
Issue number | 6 |
DOIs | |
State | Published - Feb 5 2001 |
Externally published | Yes |
ASJC Scopus subject areas
- General Physics and Astronomy