Ultrabright and ultrafast III-V semiconductor photocathodes

Siddharth Karkare; Laurent Boulet; Luca Cultrera; Bruce Dunham; Xianghong Liu; William Schaff; Ivan Bazarov

doi:10.1103/PhysRevLett.112.097601

Ultrabright and ultrafast III-V semiconductor photocathodes

Siddharth Karkare, Laurent Boulet, Luca Cultrera, Bruce Dunham, Xianghong Liu, William Schaff, Ivan Bazarov

Research output: Contribution to journal › Article › peer-review

75 Scopus citations

Abstract

Crucial photoemission properties of layered III-V semiconductor cathodes are predicted using Monte Carlo simulations. Using this modeling, a layered GaAs structure is designed to reduce simultaneously the transverse energy and response time of the emitted electrons. This structure, grown by molecular beam epitaxy and activated to negative electron affinity, is characterized. The measured values of quantum efficiency and transverse energy are found to agree well with the simulations. Such advanced layered structures will allow generation of short electron bunches from photoinjectors with superior beam brightness.

Original language	English (US)
Article number	097601
Journal	Physical Review Letters
Volume	112
Issue number	9
DOIs	https://doi.org/10.1103/PhysRevLett.112.097601
State	Published - Mar 3 2014
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1103/PhysRevLett.112.097601

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title = "Ultrabright and ultrafast III-V semiconductor photocathodes",

abstract = "Crucial photoemission properties of layered III-V semiconductor cathodes are predicted using Monte Carlo simulations. Using this modeling, a layered GaAs structure is designed to reduce simultaneously the transverse energy and response time of the emitted electrons. This structure, grown by molecular beam epitaxy and activated to negative electron affinity, is characterized. The measured values of quantum efficiency and transverse energy are found to agree well with the simulations. Such advanced layered structures will allow generation of short electron bunches from photoinjectors with superior beam brightness.",

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AU - Karkare, Siddharth

AU - Boulet, Laurent

AU - Cultrera, Luca

AU - Dunham, Bruce

AU - Liu, Xianghong

AU - Schaff, William

AU - Bazarov, Ivan

PY - 2014/3/3

Y1 - 2014/3/3

N2 - Crucial photoemission properties of layered III-V semiconductor cathodes are predicted using Monte Carlo simulations. Using this modeling, a layered GaAs structure is designed to reduce simultaneously the transverse energy and response time of the emitted electrons. This structure, grown by molecular beam epitaxy and activated to negative electron affinity, is characterized. The measured values of quantum efficiency and transverse energy are found to agree well with the simulations. Such advanced layered structures will allow generation of short electron bunches from photoinjectors with superior beam brightness.

AB - Crucial photoemission properties of layered III-V semiconductor cathodes are predicted using Monte Carlo simulations. Using this modeling, a layered GaAs structure is designed to reduce simultaneously the transverse energy and response time of the emitted electrons. This structure, grown by molecular beam epitaxy and activated to negative electron affinity, is characterized. The measured values of quantum efficiency and transverse energy are found to agree well with the simulations. Such advanced layered structures will allow generation of short electron bunches from photoinjectors with superior beam brightness.

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Ultrabright and ultrafast III-V semiconductor photocathodes

Abstract

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