Ultra-thin GaAs single-junction solar cells integrated with lattice-matched ZnSe as a reflective back scattering layer

Weiquan Yang; Charles Allen; Jing Jing Li; Hector Cotal; Christopher Fetzer; Shi Liu; Ding Ding; Stuart Farrell; Zhaoyu He; Hua Li; Hank Dettlaff; Nasser Karam; Yong-Hang Zhang

doi:10.1109/PVSC.2012.6317766

Ultra-thin GaAs single-junction solar cells integrated with lattice-matched ZnSe as a reflective back scattering layer

Weiquan Yang, Charles Allen, Jing Jing Li, Hector Cotal, Christopher Fetzer, Shi Liu, Ding Ding, Stuart Farrell, Zhaoyu He, Hua Li, Hank Dettlaff, Nasser Karam, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

This paper proposes the use of a monolithically integrated back scattering layer to improve the efficiency of ultra-thin GaAs single-junction solar cells. The device consists of a double-heterostructure GaAs/InGaP single-junction solar cell integrated with a lattice-matched ZnSe layer etched as the back scattering layer coated with a highly reflective Au film and flip-chip bonded on a carrier substrate. ZnSe surface was roughened to form different textures by wet etching. Without anti-reflective coating, 300×300 μm² devices with a 300 nm GaAs active region and a reflective ZnSe/Au back scattering layer, demonstrate a short-circuit current density of 17.2 mA/cm ², an open-circuit voltage of 0.915 V, and a power conversion efficiency of 11.8% under 1 sun solar radiation (AM 1.5G, 0.1 W/cm²). External quantum efficiency (EQE) measurements show EQE over 65% at 400 nm and 30% at 850 nm.

Original language	English (US)
Title of host publication	Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages	978-981
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2012.6317766
State	Published - 2012
Event	38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States Duration: Jun 3 2012 → Jun 8 2012

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/Territory	United States
City	Austin, TX
Period	6/3/12 → 6/8/12

Keywords

GaAs
Single-junction solar cells
ZeSe
light scattering
photovoltaic cells

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2012.6317766

Cite this

Yang, W., Allen, C., Li, J. J., Cotal, H., Fetzer, C., Liu, S., Ding, D., Farrell, S., He, Z., Li, H., Dettlaff, H., Karam, N., & Zhang, Y.-H. (2012). Ultra-thin GaAs single-junction solar cells integrated with lattice-matched ZnSe as a reflective back scattering layer. In Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012 (pp. 978-981). Article 6317766 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2012.6317766

Ultra-thin GaAs single-junction solar cells integrated with lattice-matched ZnSe as a reflective back scattering layer. / Yang, Weiquan; Allen, Charles; Li, Jing Jing et al.
Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. p. 978-981 6317766 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yang, W, Allen, C, Li, JJ, Cotal, H, Fetzer, C, Liu, S, Ding, D, Farrell, S, He, Z, Li, H, Dettlaff, H, Karam, N & Zhang, Y-H 2012, Ultra-thin GaAs single-junction solar cells integrated with lattice-matched ZnSe as a reflective back scattering layer. in Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012., 6317766, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 978-981, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 6/3/12. https://doi.org/10.1109/PVSC.2012.6317766

Yang W, Allen C, Li JJ, Cotal H, Fetzer C, Liu S et al. Ultra-thin GaAs single-junction solar cells integrated with lattice-matched ZnSe as a reflective back scattering layer. In Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. p. 978-981. 6317766. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2012.6317766

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abstract = "This paper proposes the use of a monolithically integrated back scattering layer to improve the efficiency of ultra-thin GaAs single-junction solar cells. The device consists of a double-heterostructure GaAs/InGaP single-junction solar cell integrated with a lattice-matched ZnSe layer etched as the back scattering layer coated with a highly reflective Au film and flip-chip bonded on a carrier substrate. ZnSe surface was roughened to form different textures by wet etching. Without anti-reflective coating, 300×300 μm2 devices with a 300 nm GaAs active region and a reflective ZnSe/Au back scattering layer, demonstrate a short-circuit current density of 17.2 mA/cm 2, an open-circuit voltage of 0.915 V, and a power conversion efficiency of 11.8% under 1 sun solar radiation (AM 1.5G, 0.1 W/cm2). External quantum efficiency (EQE) measurements show EQE over 65% at 400 nm and 30% at 850 nm.",

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author = "Weiquan Yang and Charles Allen and Li, {Jing Jing} and Hector Cotal and Christopher Fetzer and Shi Liu and Ding Ding and Stuart Farrell and Zhaoyu He and Hua Li and Hank Dettlaff and Nasser Karam and Yong-Hang Zhang",

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AU - Fetzer, Christopher

AU - Liu, Shi

AU - Ding, Ding

AU - Farrell, Stuart

AU - He, Zhaoyu

AU - Li, Hua

AU - Dettlaff, Hank

AU - Karam, Nasser

AU - Zhang, Yong-Hang

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AB - This paper proposes the use of a monolithically integrated back scattering layer to improve the efficiency of ultra-thin GaAs single-junction solar cells. The device consists of a double-heterostructure GaAs/InGaP single-junction solar cell integrated with a lattice-matched ZnSe layer etched as the back scattering layer coated with a highly reflective Au film and flip-chip bonded on a carrier substrate. ZnSe surface was roughened to form different textures by wet etching. Without anti-reflective coating, 300×300 μm2 devices with a 300 nm GaAs active region and a reflective ZnSe/Au back scattering layer, demonstrate a short-circuit current density of 17.2 mA/cm 2, an open-circuit voltage of 0.915 V, and a power conversion efficiency of 11.8% under 1 sun solar radiation (AM 1.5G, 0.1 W/cm2). External quantum efficiency (EQE) measurements show EQE over 65% at 400 nm and 30% at 850 nm.

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KW - photovoltaic cells

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Ultra-thin GaAs single-junction solar cells integrated with lattice-matched ZnSe as a reflective back scattering layer

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Keywords

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