Ultra-thin GaAs single-junction solar cells integrated with lattice-matched ZnSe as a reflective back scattering layer

Weiquan Yang, Charles Allen, Jing Jing Li, Hector Cotal, Christopher Fetzer, Shi Liu, Ding Ding, Stuart Farrell, Zhaoyu He, Hua Li, Hank Dettlaff, Nasser Karam, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

This paper proposes the use of a monolithically integrated back scattering layer to improve the efficiency of ultra-thin GaAs single-junction solar cells. The device consists of a double-heterostructure GaAs/InGaP single-junction solar cell integrated with a lattice-matched ZnSe layer etched as the back scattering layer coated with a highly reflective Au film and flip-chip bonded on a carrier substrate. ZnSe surface was roughened to form different textures by wet etching. Without anti-reflective coating, 300×300 μm2 devices with a 300 nm GaAs active region and a reflective ZnSe/Au back scattering layer, demonstrate a short-circuit current density of 17.2 mA/cm 2, an open-circuit voltage of 0.915 V, and a power conversion efficiency of 11.8% under 1 sun solar radiation (AM 1.5G, 0.1 W/cm2). External quantum efficiency (EQE) measurements show EQE over 65% at 400 nm and 30% at 850 nm.

Original languageEnglish (US)
Title of host publicationProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages978-981
Number of pages4
DOIs
StatePublished - 2012
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: Jun 3 2012Jun 8 2012

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
CountryUnited States
CityAustin, TX
Period6/3/126/8/12

Keywords

  • GaAs
  • Single-junction solar cells
  • ZeSe
  • light scattering
  • photovoltaic cells

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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