Abstract
This paper proposes and demonstrates the use of a textured and lattice-matched semiconductor layer coated with a Au reflector for reflective back scattering to enhance the efficiency of single-junction solar cells with ultra-thin absorbers. The device structure studied in this work consists of an In0.49Ga0.51P/GaAs/In0.49Ga0.51P double-heterostructure single-junction solar cell with a GaAs absorber of either 300 nm or 1000 nm thick, as well as a textured Al0.52In 0.48P layer coated with a highly reflective Au film. The devices, areas ranging from 0.3×0.3 mm2 to 1×1 mm2, are flip-chip bonded onto Si carrier substrates, covered by a contact metal grid (with a 9.7% or 10.7% shadow area for the 300 nm and 1000 nm devices, respectively) and a MgF2/ZnS anti-reflective coating. Both types of device designs demonstrate an open-circuit voltage of 1.00 V, short-circuit current densities of 24.5 and 26.1 mA/cm2, and power conversion efficiencies of 19.1% and 20.6%, respectively; these measurements are carried out under 1 sun solar radiation (AM 1.5G, 0.1 W/cm2). It is reasonable to expect that the short-circuit current densities and conversion efficiencies of these devices could reach 26.6 mA/cm2 and 28.6 mA/cm2, and 20.7% and 22.6%, respectively, when a typical contact grid layout with 2% surface coverage is used. These short-circuit current densities are only 3.6 and 1.6 mA/cm2 lower than the maximum theoretical value 30.2 mA/cm2, respectively.
| Original language | English (US) |
|---|---|
| Title of host publication | Conference Record of the IEEE Photovoltaic Specialists Conference |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 3329-3332 |
| Number of pages | 4 |
| ISBN (Print) | 9781479932993 |
| DOIs | |
| State | Published - 2013 |
| Event | 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: Jun 16 2013 → Jun 21 2013 |
Other
| Other | 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 |
|---|---|
| Country | United States |
| City | Tampa, FL |
| Period | 6/16/13 → 6/21/13 |
Fingerprint
Keywords
- Gallium arsenide
- Photovoltaic cell
- Surface texture
- Thin film devices
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
Cite this
Ultra-thin GaAs single-junction solar cells integrated with an AlInP layer for reflective back scattering. / Yang, Weiquan; Becker, Jacob; Kuo, Ying Shen; Li, Jing Jing; Liu, Shi; Landini, Barbara; Campman, Ken; Zhang, Yong-Hang.
Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc., 2013. p. 3329-3332 6745163.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Ultra-thin GaAs single-junction solar cells integrated with an AlInP layer for reflective back scattering
AU - Yang, Weiquan
AU - Becker, Jacob
AU - Kuo, Ying Shen
AU - Li, Jing Jing
AU - Liu, Shi
AU - Landini, Barbara
AU - Campman, Ken
AU - Zhang, Yong-Hang
PY - 2013
Y1 - 2013
N2 - This paper proposes and demonstrates the use of a textured and lattice-matched semiconductor layer coated with a Au reflector for reflective back scattering to enhance the efficiency of single-junction solar cells with ultra-thin absorbers. The device structure studied in this work consists of an In0.49Ga0.51P/GaAs/In0.49Ga0.51P double-heterostructure single-junction solar cell with a GaAs absorber of either 300 nm or 1000 nm thick, as well as a textured Al0.52In 0.48P layer coated with a highly reflective Au film. The devices, areas ranging from 0.3×0.3 mm2 to 1×1 mm2, are flip-chip bonded onto Si carrier substrates, covered by a contact metal grid (with a 9.7% or 10.7% shadow area for the 300 nm and 1000 nm devices, respectively) and a MgF2/ZnS anti-reflective coating. Both types of device designs demonstrate an open-circuit voltage of 1.00 V, short-circuit current densities of 24.5 and 26.1 mA/cm2, and power conversion efficiencies of 19.1% and 20.6%, respectively; these measurements are carried out under 1 sun solar radiation (AM 1.5G, 0.1 W/cm2). It is reasonable to expect that the short-circuit current densities and conversion efficiencies of these devices could reach 26.6 mA/cm2 and 28.6 mA/cm2, and 20.7% and 22.6%, respectively, when a typical contact grid layout with 2% surface coverage is used. These short-circuit current densities are only 3.6 and 1.6 mA/cm2 lower than the maximum theoretical value 30.2 mA/cm2, respectively.
AB - This paper proposes and demonstrates the use of a textured and lattice-matched semiconductor layer coated with a Au reflector for reflective back scattering to enhance the efficiency of single-junction solar cells with ultra-thin absorbers. The device structure studied in this work consists of an In0.49Ga0.51P/GaAs/In0.49Ga0.51P double-heterostructure single-junction solar cell with a GaAs absorber of either 300 nm or 1000 nm thick, as well as a textured Al0.52In 0.48P layer coated with a highly reflective Au film. The devices, areas ranging from 0.3×0.3 mm2 to 1×1 mm2, are flip-chip bonded onto Si carrier substrates, covered by a contact metal grid (with a 9.7% or 10.7% shadow area for the 300 nm and 1000 nm devices, respectively) and a MgF2/ZnS anti-reflective coating. Both types of device designs demonstrate an open-circuit voltage of 1.00 V, short-circuit current densities of 24.5 and 26.1 mA/cm2, and power conversion efficiencies of 19.1% and 20.6%, respectively; these measurements are carried out under 1 sun solar radiation (AM 1.5G, 0.1 W/cm2). It is reasonable to expect that the short-circuit current densities and conversion efficiencies of these devices could reach 26.6 mA/cm2 and 28.6 mA/cm2, and 20.7% and 22.6%, respectively, when a typical contact grid layout with 2% surface coverage is used. These short-circuit current densities are only 3.6 and 1.6 mA/cm2 lower than the maximum theoretical value 30.2 mA/cm2, respectively.
KW - Gallium arsenide
KW - Photovoltaic cell
KW - Surface texture
KW - Thin film devices
UR - http://www.scopus.com/inward/record.url?scp=84896452790&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84896452790&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2013.6745163
DO - 10.1109/PVSC.2013.6745163
M3 - Conference contribution
AN - SCOPUS:84896452790
SN - 9781479932993
SP - 3329
EP - 3332
BT - Conference Record of the IEEE Photovoltaic Specialists Conference
PB - Institute of Electrical and Electronics Engineers Inc.
ER -