Ultra-thin GaAs single-junction solar cells integrated with an AlInP layer for reflective back scattering

Weiquan Yang, Jacob Becker, Ying Shen Kuo, Jing Jing Li, Shi Liu, Barbara Landini, Ken Campman, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

This paper proposes and demonstrates the use of a textured and lattice-matched semiconductor layer coated with a Au reflector for reflective back scattering to enhance the efficiency of single-junction solar cells with ultra-thin absorbers. The device structure studied in this work consists of an In0.49Ga0.51P/GaAs/In0.49Ga0.51P double-heterostructure single-junction solar cell with a GaAs absorber of either 300 nm or 1000 nm thick, as well as a textured Al0.52In 0.48P layer coated with a highly reflective Au film. The devices, areas ranging from 0.3×0.3 mm2 to 1×1 mm2, are flip-chip bonded onto Si carrier substrates, covered by a contact metal grid (with a 9.7% or 10.7% shadow area for the 300 nm and 1000 nm devices, respectively) and a MgF2/ZnS anti-reflective coating. Both types of device designs demonstrate an open-circuit voltage of 1.00 V, short-circuit current densities of 24.5 and 26.1 mA/cm2, and power conversion efficiencies of 19.1% and 20.6%, respectively; these measurements are carried out under 1 sun solar radiation (AM 1.5G, 0.1 W/cm2). It is reasonable to expect that the short-circuit current densities and conversion efficiencies of these devices could reach 26.6 mA/cm2 and 28.6 mA/cm2, and 20.7% and 22.6%, respectively, when a typical contact grid layout with 2% surface coverage is used. These short-circuit current densities are only 3.6 and 1.6 mA/cm2 lower than the maximum theoretical value 30.2 mA/cm2, respectively.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3329-3332
Number of pages4
ISBN (Print)9781479932993
DOIs
StatePublished - 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period6/16/136/21/13

Fingerprint

Short circuit currents
Solar cells
Current density
Scattering
Conversion efficiency
Reflective coatings
Open circuit voltage
Solar radiation
Crystal lattices
Sun
Heterojunctions
Semiconductor materials
Substrates
Metals

Keywords

  • Gallium arsenide
  • Photovoltaic cell
  • Surface texture
  • Thin film devices

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Yang, W., Becker, J., Kuo, Y. S., Li, J. J., Liu, S., Landini, B., ... Zhang, Y-H. (2013). Ultra-thin GaAs single-junction solar cells integrated with an AlInP layer for reflective back scattering. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 3329-3332). [6745163] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6745163

Ultra-thin GaAs single-junction solar cells integrated with an AlInP layer for reflective back scattering. / Yang, Weiquan; Becker, Jacob; Kuo, Ying Shen; Li, Jing Jing; Liu, Shi; Landini, Barbara; Campman, Ken; Zhang, Yong-Hang.

Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc., 2013. p. 3329-3332 6745163.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yang, W, Becker, J, Kuo, YS, Li, JJ, Liu, S, Landini, B, Campman, K & Zhang, Y-H 2013, Ultra-thin GaAs single-junction solar cells integrated with an AlInP layer for reflective back scattering. in Conference Record of the IEEE Photovoltaic Specialists Conference., 6745163, Institute of Electrical and Electronics Engineers Inc., pp. 3329-3332, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 6/16/13. https://doi.org/10.1109/PVSC.2013.6745163
Yang W, Becker J, Kuo YS, Li JJ, Liu S, Landini B et al. Ultra-thin GaAs single-junction solar cells integrated with an AlInP layer for reflective back scattering. In Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc. 2013. p. 3329-3332. 6745163 https://doi.org/10.1109/PVSC.2013.6745163
Yang, Weiquan ; Becker, Jacob ; Kuo, Ying Shen ; Li, Jing Jing ; Liu, Shi ; Landini, Barbara ; Campman, Ken ; Zhang, Yong-Hang. / Ultra-thin GaAs single-junction solar cells integrated with an AlInP layer for reflective back scattering. Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 3329-3332
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abstract = "This paper proposes and demonstrates the use of a textured and lattice-matched semiconductor layer coated with a Au reflector for reflective back scattering to enhance the efficiency of single-junction solar cells with ultra-thin absorbers. The device structure studied in this work consists of an In0.49Ga0.51P/GaAs/In0.49Ga0.51P double-heterostructure single-junction solar cell with a GaAs absorber of either 300 nm or 1000 nm thick, as well as a textured Al0.52In 0.48P layer coated with a highly reflective Au film. The devices, areas ranging from 0.3×0.3 mm2 to 1×1 mm2, are flip-chip bonded onto Si carrier substrates, covered by a contact metal grid (with a 9.7{\%} or 10.7{\%} shadow area for the 300 nm and 1000 nm devices, respectively) and a MgF2/ZnS anti-reflective coating. Both types of device designs demonstrate an open-circuit voltage of 1.00 V, short-circuit current densities of 24.5 and 26.1 mA/cm2, and power conversion efficiencies of 19.1{\%} and 20.6{\%}, respectively; these measurements are carried out under 1 sun solar radiation (AM 1.5G, 0.1 W/cm2). It is reasonable to expect that the short-circuit current densities and conversion efficiencies of these devices could reach 26.6 mA/cm2 and 28.6 mA/cm2, and 20.7{\%} and 22.6{\%}, respectively, when a typical contact grid layout with 2{\%} surface coverage is used. These short-circuit current densities are only 3.6 and 1.6 mA/cm2 lower than the maximum theoretical value 30.2 mA/cm2, respectively.",
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