Ultra-thin GaAs single-junction solar cells integrated with an AlInP layer for reflective back scattering

Weiquan Yang, Jacob Becker, Ying Shen Kuo, Jing Jing Li, Shi Liu, Barbara Landini, Ken Campman, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

This paper proposes and demonstrates the use of a textured and lattice-matched semiconductor layer coated with a Au reflector for reflective back scattering to enhance the efficiency of single-junction solar cells with ultra-thin absorbers. The device structure studied in this work consists of an In0.49Ga0.51P/GaAs/In0.49Ga0.51P double-heterostructure single-junction solar cell with a GaAs absorber of either 300 nm or 1000 nm thick, as well as a textured Al0.52In 0.48P layer coated with a highly reflective Au film. The devices, areas ranging from 0.3×0.3 mm2 to 1×1 mm2, are flip-chip bonded onto Si carrier substrates, covered by a contact metal grid (with a 9.7% or 10.7% shadow area for the 300 nm and 1000 nm devices, respectively) and a MgF2/ZnS anti-reflective coating. Both types of device designs demonstrate an open-circuit voltage of 1.00 V, short-circuit current densities of 24.5 and 26.1 mA/cm2, and power conversion efficiencies of 19.1% and 20.6%, respectively; these measurements are carried out under 1 sun solar radiation (AM 1.5G, 0.1 W/cm2). It is reasonable to expect that the short-circuit current densities and conversion efficiencies of these devices could reach 26.6 mA/cm2 and 28.6 mA/cm2, and 20.7% and 22.6%, respectively, when a typical contact grid layout with 2% surface coverage is used. These short-circuit current densities are only 3.6 and 1.6 mA/cm2 lower than the maximum theoretical value 30.2 mA/cm2, respectively.

Original languageEnglish (US)
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3329-3332
Number of pages4
ISBN (Print)9781479932993
DOIs
StatePublished - 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period6/16/136/21/13

Keywords

  • Gallium arsenide
  • Photovoltaic cell
  • Surface texture
  • Thin film devices

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Yang, W., Becker, J., Kuo, Y. S., Li, J. J., Liu, S., Landini, B., Campman, K., & Zhang, Y-H. (2013). Ultra-thin GaAs single-junction solar cells integrated with an AlInP layer for reflective back scattering. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 3329-3332). [6745163] (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6745163