Abstract

This work focuses on ultra thin (≤ 1nm) Al2O3 passivation for silicon hetero-junction solar cell. We developed a post annealing process compatible with the hetero-junction structure. We accomplished effective minority lifetime over 3 ms and implied open circuit voltages over 700 mV using a 10 nm thick Al2O3. To promote carrier transportation across the Al2O3 layer we had to reduce the layer thickness by a factor of 10. The 1 nm thin layer alone provides very poor passivation as demonstrated by the low effective minority carrier lifetime (50μs) and low implied open circuit (590mV). To improve both passivation and carrier transportation, a ultra thin stack of SiO2-Al2O3 (1.7 nm/1 nm) was developed successfully and effective minority carrier lifetimes up to 350 μs and implied open circuit voltage up to 648mV were demonstrated without post annealing optimization.

Original languageEnglish (US)
Title of host publication2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2684-2687
Number of pages4
ISBN (Electronic)9781728104942
DOIs
StatePublished - Jun 2019
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: Jun 16 2019Jun 21 2019

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/TerritoryUnited States
CityChicago
Period6/16/196/21/19

Keywords

  • AlO passivation
  • hetero-junction
  • silicon solar cell
  • ultra thin AlO

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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