@inproceedings{6cde733c15e740f986eebae8e976f4c5,
title = "Ultra thin Al2O3 passivation for hetero-junction Si solar cell",
abstract = "This work focuses on ultra thin (≤ 1nm) Al2O3 passivation for silicon hetero-junction solar cell. We developed a post annealing process compatible with the hetero-junction structure. We accomplished effective minority lifetime over 3 ms and implied open circuit voltages over 700 mV using a 10 nm thick Al2O3. To promote carrier transportation across the Al2O3 layer we had to reduce the layer thickness by a factor of 10. The 1 nm thin layer alone provides very poor passivation as demonstrated by the low effective minority carrier lifetime (50μs) and low implied open circuit (590mV). To improve both passivation and carrier transportation, a ultra thin stack of SiO2-Al2O3 (1.7 nm/1 nm) was developed successfully and effective minority carrier lifetimes up to 350 μs and implied open circuit voltage up to 648mV were demonstrated without post annealing optimization.",
keywords = "AlO passivation, hetero-junction, silicon solar cell, ultra thin AlO",
author = "Sangpyeong Kim and Pradeep Balaji and Andre Augusto and Stuart Bowden and Honsberg, {Christiana B.}",
note = "Funding Information: The authors thank to staff in SPL (Solar Power Lab), especially, Bill Dauksher, and NanoFab at Arizona State University. This work was supported by NSF (National Science Foundation) and DOE (Department of Energy) under QESST (Quantum Energy and Sustainable Solar Technologies) grant EEC-1041895. Publisher Copyright: {\textcopyright} 2019 IEEE.; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",
year = "2019",
month = jun,
doi = "10.1109/PVSC40753.2019.8980907",
language = "English (US)",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2684--2687",
booktitle = "2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019",
}