Ultra temperature-stable bulk-acoustic-wave resonators with SiO 2 compensation layer

Hongyu Yu, Wei Pang, Hao Zhang, Eun Sok Kim

Research output: Contribution to journalArticle

36 Scopus citations

Abstract

This paper describes temperature compensated bulk acoustic-wave resonators (BAR) with temperature coefficient of frequency (TCF) less than 1 ppm/°C at above 3 GHz. The temperature compensation is produced from the unique physical property of silicon dioxide's positive TCF, unlike most other materials that have negative TCF. Two types of resonators have been explored: film bulk acoustic resonator (FBAR) composed of Al/ZnO/Al/SiO 2 on a surface micromachined cantilever that is released by XeF 2 vapor etching and high-overtone acoustic resonator (HBAR) composed of an Al/ZnO/Al resonator on a bulk micromachined SiO 2/Si/SiO 2 supporting substrate.

Original languageEnglish (US)
Pages (from-to)2102-2109
Number of pages8
JournalIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume54
Issue number10
DOIs
StatePublished - Oct 2007

ASJC Scopus subject areas

  • Instrumentation
  • Acoustics and Ultrasonics
  • Electrical and Electronic Engineering

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