Ultra temperature-stable bulk-acoustic-wave resonators with SiO 2 compensation layer

Hongyu Yu, Wei Pang, Hao Zhang, Eun Sok Kim

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

This paper describes temperature compensated bulk acoustic-wave resonators (BAR) with temperature coefficient of frequency (TCF) less than 1 ppm/°C at above 3 GHz. The temperature compensation is produced from the unique physical property of silicon dioxide's positive TCF, unlike most other materials that have negative TCF. Two types of resonators have been explored: film bulk acoustic resonator (FBAR) composed of Al/ZnO/Al/SiO 2 on a surface micromachined cantilever that is released by XeF 2 vapor etching and high-overtone acoustic resonator (HBAR) composed of an Al/ZnO/Al resonator on a bulk micromachined SiO 2/Si/SiO 2 supporting substrate.

Original languageEnglish (US)
Pages (from-to)2102-2109
Number of pages8
JournalIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume54
Issue number10
DOIs
StatePublished - Oct 2007
Externally publishedYes

Fingerprint

Acoustic resonators
Resonators
resonators
Acoustic waves
acoustics
Positive temperature coefficient
Negative temperature coefficient
coefficients
Temperature
temperature
Etching
Physical properties
Vapors
Silica
temperature compensation
Substrates
physical properties
Compensation and Redress
etching
vapors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Acoustics and Ultrasonics

Cite this

Ultra temperature-stable bulk-acoustic-wave resonators with SiO 2 compensation layer. / Yu, Hongyu; Pang, Wei; Zhang, Hao; Kim, Eun Sok.

In: IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, Vol. 54, No. 10, 10.2007, p. 2102-2109.

Research output: Contribution to journalArticle

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