Abstract
This paper describes temperature compensated bulk acoustic-wave resonators (BAR) with temperature coefficient of frequency (TCF) less than 1 ppm/°C at above 3 GHz. The temperature compensation is produced from the unique physical property of silicon dioxide's positive TCF, unlike most other materials that have negative TCF. Two types of resonators have been explored: film bulk acoustic resonator (FBAR) composed of Al/ZnO/Al/SiO 2 on a surface micromachined cantilever that is released by XeF 2 vapor etching and high-overtone acoustic resonator (HBAR) composed of an Al/ZnO/Al resonator on a bulk micromachined SiO 2/Si/SiO 2 supporting substrate.
Original language | English (US) |
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Pages (from-to) | 2102-2109 |
Number of pages | 8 |
Journal | IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control |
Volume | 54 |
Issue number | 10 |
DOIs | |
State | Published - Oct 2007 |
Externally published | Yes |
ASJC Scopus subject areas
- Instrumentation
- Acoustics and Ultrasonics
- Electrical and Electronic Engineering