@inproceedings{392c11dfb4c94936a2430de2d2a01808,
title = "Ultra-submicrometer microwave GaAs MESFETs and HEMTs",
abstract = "Ultra-submicron gate GaAs MESFETs and AlGaAs/GaAs HEMTs have been fabricated in an electronbeam lithographic process with gate lengths varying from 25 to 80 nm. For gate length less than 100 nm, electrical characteristics deteriorate due to fringing capacitance at a low aspect ratio. Velocity overshoot is observed for gate length shorter than about 55 nm. The maximum effective electron saturation velocity obtained is 3×107 cm/sec for a 30 nm HEMT. A maximum fT value of 167 GHz was obtained for a 37.5 nm MESFET.",
author = "Han, {J. H.} and Ryan, {J. M.} and Kriman, {A. M.} and Ferry, {D. K.}",
year = "1990",
doi = "10.1117/12.20919",
language = "English (US)",
isbn = "0819403393",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Publ by Int Soc for Optical Engineering",
pages = "192--199",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "High-Speed Electronics and Device Scaling ; Conference date: 18-03-1990 Through 19-03-1990",
}