Ultra-submicrometer microwave GaAs MESFETs and HEMTs

J. H. Han, J. M. Ryan, A. M. Kriman, D. K. Ferry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Ultra-submicron gate GaAs MESFETs and AlGaAs/GaAs HEMTs have been fabricated in an electronbeam lithographic process with gate lengths varying from 25 to 80 nm. For gate length less than 100 nm, electrical characteristics deteriorate due to fringing capacitance at a low aspect ratio. Velocity overshoot is observed for gate length shorter than about 55 nm. The maximum effective electron saturation velocity obtained is 3×107 cm/sec for a 30 nm HEMT. A maximum fT value of 167 GHz was obtained for a 37.5 nm MESFET.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsLester F. Eastman
Place of PublicationBellingham, WA, United States
PublisherPubl by Int Soc for Optical Engineering
Pages192-199
Number of pages8
Volume1288
ISBN (Print)0819403393
StatePublished - 1990
EventHigh-Speed Electronics and Device Scaling - San Diego, CA, USA
Duration: Mar 18 1990Mar 19 1990

Other

OtherHigh-Speed Electronics and Device Scaling
CitySan Diego, CA, USA
Period3/18/903/19/90

Fingerprint

High electron mobility transistors
high electron mobility transistors
field effect transistors
Microwaves
Gates (transistor)
microwaves
Aspect ratio
Capacitance
low aspect ratio
Electrons
aluminum gallium arsenides
capacitance
saturation
electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Han, J. H., Ryan, J. M., Kriman, A. M., & Ferry, D. K. (1990). Ultra-submicrometer microwave GaAs MESFETs and HEMTs. In L. F. Eastman (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1288, pp. 192-199). Bellingham, WA, United States: Publ by Int Soc for Optical Engineering.

Ultra-submicrometer microwave GaAs MESFETs and HEMTs. / Han, J. H.; Ryan, J. M.; Kriman, A. M.; Ferry, D. K.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Lester F. Eastman. Vol. 1288 Bellingham, WA, United States : Publ by Int Soc for Optical Engineering, 1990. p. 192-199.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Han, JH, Ryan, JM, Kriman, AM & Ferry, DK 1990, Ultra-submicrometer microwave GaAs MESFETs and HEMTs. in LF Eastman (ed.), Proceedings of SPIE - The International Society for Optical Engineering. vol. 1288, Publ by Int Soc for Optical Engineering, Bellingham, WA, United States, pp. 192-199, High-Speed Electronics and Device Scaling, San Diego, CA, USA, 3/18/90.
Han JH, Ryan JM, Kriman AM, Ferry DK. Ultra-submicrometer microwave GaAs MESFETs and HEMTs. In Eastman LF, editor, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1288. Bellingham, WA, United States: Publ by Int Soc for Optical Engineering. 1990. p. 192-199
Han, J. H. ; Ryan, J. M. ; Kriman, A. M. ; Ferry, D. K. / Ultra-submicrometer microwave GaAs MESFETs and HEMTs. Proceedings of SPIE - The International Society for Optical Engineering. editor / Lester F. Eastman. Vol. 1288 Bellingham, WA, United States : Publ by Int Soc for Optical Engineering, 1990. pp. 192-199
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