Abstract
Ultra-submicrometer-gate AlGaAs/GaAs high-electron-mobility transistors (HEMT’s) with gate lengths ranging from 25 to 85 nm were fabricated, using electron-beam lithographic techniques on epitaxial wafers grown by molecular beam epitaxy. These devices show that velocity overshoot and short-gate geometry effects play an important role for gate lengths less than 100 nm. The maximum intrinsic transconductance is 215 mS/mm, and the effective saturated electron velocity reaches 3 × 107 cm/s for a 30-nm HEMT.
Original language | English (US) |
---|---|
Pages (from-to) | 209-211 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 11 |
Issue number | 5 |
DOIs | |
State | Published - May 1990 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering