Ultra-submicrometer-gate AlGaAs/GaAs HEMT's

Jaeheon Han, David K. Ferry, Peter Newman

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Ultra-submicrometer-gate AlGaAs/GaAs high-electron-mobility transistors (HEMTs) that have gate lengths ranging from 25 to 85 nm and were fabricated using electron-beam lithographic techniques on epitaxial wafers grown by molecular beam epitaxy are discussed. These devices show that velocity overshoot and short-gate geometry effects play an important role for the gate lengths less than 100 nm. The maximum intrinsic transconductance is 215 mS/mm, and the effective saturated electron velocity reaches 3 × 107 cm/s for a 30-nm HEMT.

Original languageEnglish (US)
Pages (from-to)209-211
Number of pages3
JournalElectron device letters
Volume11
Issue number5
StatePublished - May 1990

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High electron mobility transistors
Gates (transistor)
Transconductance
Molecular beam epitaxy
Electron beams
Geometry
Electrons
gallium arsenide

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Han, J., Ferry, D. K., & Newman, P. (1990). Ultra-submicrometer-gate AlGaAs/GaAs HEMT's. Electron device letters, 11(5), 209-211.

Ultra-submicrometer-gate AlGaAs/GaAs HEMT's. / Han, Jaeheon; Ferry, David K.; Newman, Peter.

In: Electron device letters, Vol. 11, No. 5, 05.1990, p. 209-211.

Research output: Contribution to journalArticle

Han, J, Ferry, DK & Newman, P 1990, 'Ultra-submicrometer-gate AlGaAs/GaAs HEMT's', Electron device letters, vol. 11, no. 5, pp. 209-211.
Han J, Ferry DK, Newman P. Ultra-submicrometer-gate AlGaAs/GaAs HEMT's. Electron device letters. 1990 May;11(5):209-211.
Han, Jaeheon ; Ferry, David K. ; Newman, Peter. / Ultra-submicrometer-gate AlGaAs/GaAs HEMT's. In: Electron device letters. 1990 ; Vol. 11, No. 5. pp. 209-211.
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