Ultra-Submicrometer-Gate AlGaAs/GaAs HEMT’s

Jaeheon Han; David K. Ferry; Peter Newman

doi:10.1109/55.55252

Ultra-Submicrometer-Gate AlGaAs/GaAs HEMT’s

Jaeheon Han, David K. Ferry, Peter Newman

Research output: Contribution to journal › Article

37 Scopus citations

Abstract

Ultra-submicrometer-gate AlGaAs/GaAs high-electron-mobility transistors (HEMT’s) with gate lengths ranging from 25 to 85 nm were fabricated, using electron-beam lithographic techniques on epitaxial wafers grown by molecular beam epitaxy. These devices show that velocity overshoot and short-gate geometry effects play an important role for gate lengths less than 100 nm. The maximum intrinsic transconductance is 215 mS/mm, and the effective saturated electron velocity reaches 3 × 107 cm/s for a 30-nm HEMT.

Original language	English (US)
Pages (from-to)	209-211
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	11
Issue number	5
DOIs	https://doi.org/10.1109/55.55252
State	Published - May 1990

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Han, J., Ferry, D. K., & Newman, P. (1990). Ultra-Submicrometer-Gate AlGaAs/GaAs HEMT’s. IEEE Electron Device Letters, 11(5), 209-211. https://doi.org/10.1109/55.55252

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