Ultra-Submicrometer-Gate AlGaAs/GaAs HEMT’s

Jaeheon Han; David K. Ferry; Peter Newman

doi:10.1109/55.55252

Ultra-Submicrometer-Gate AlGaAs/GaAs HEMT’s

Jaeheon Han, David K. Ferry, Peter Newman

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

Ultra-submicrometer-gate AlGaAs/GaAs high-electron-mobility transistors (HEMT’s) with gate lengths ranging from 25 to 85 nm were fabricated, using electron-beam lithographic techniques on epitaxial wafers grown by molecular beam epitaxy. These devices show that velocity overshoot and short-gate geometry effects play an important role for gate lengths less than 100 nm. The maximum intrinsic transconductance is 215 mS/mm, and the effective saturated electron velocity reaches 3 × 107 cm/s for a 30-nm HEMT.

Original language	English (US)
Pages (from-to)	209-211
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	11
Issue number	5
DOIs	https://doi.org/10.1109/55.55252
State	Published - May 1990

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Ultra-Submicrometer-Gate AlGaAs/GaAs HEMT{\textquoteright}s",

abstract = "Ultra-submicrometer-gate AlGaAs/GaAs high-electron-mobility transistors (HEMT{\textquoteright}s) with gate lengths ranging from 25 to 85 nm were fabricated, using electron-beam lithographic techniques on epitaxial wafers grown by molecular beam epitaxy. These devices show that velocity overshoot and short-gate geometry effects play an important role for gate lengths less than 100 nm. The maximum intrinsic transconductance is 215 mS/mm, and the effective saturated electron velocity reaches 3 × 107 cm/s for a 30-nm HEMT.",

author = "Jaeheon Han and Ferry, {David K.} and Peter Newman",

note = "Funding Information: Manuscript received February 14, 1990. This work was supported by the Army Research Office. J. Han and D. K. Feny are with the Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287. P. Newrnan is with the U.S. Army Electronics Technology and Device Laboratory, Fort Monrnouth, NJ 07703. IEEE Log Number 9035485.",

year = "1990",

month = may,

doi = "10.1109/55.55252",

language = "English (US)",

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T1 - Ultra-Submicrometer-Gate AlGaAs/GaAs HEMT’s

AU - Han, Jaeheon

AU - Ferry, David K.

AU - Newman, Peter

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PY - 1990/5

Y1 - 1990/5

N2 - Ultra-submicrometer-gate AlGaAs/GaAs high-electron-mobility transistors (HEMT’s) with gate lengths ranging from 25 to 85 nm were fabricated, using electron-beam lithographic techniques on epitaxial wafers grown by molecular beam epitaxy. These devices show that velocity overshoot and short-gate geometry effects play an important role for gate lengths less than 100 nm. The maximum intrinsic transconductance is 215 mS/mm, and the effective saturated electron velocity reaches 3 × 107 cm/s for a 30-nm HEMT.

AB - Ultra-submicrometer-gate AlGaAs/GaAs high-electron-mobility transistors (HEMT’s) with gate lengths ranging from 25 to 85 nm were fabricated, using electron-beam lithographic techniques on epitaxial wafers grown by molecular beam epitaxy. These devices show that velocity overshoot and short-gate geometry effects play an important role for gate lengths less than 100 nm. The maximum intrinsic transconductance is 215 mS/mm, and the effective saturated electron velocity reaches 3 × 107 cm/s for a 30-nm HEMT.

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Ultra-Submicrometer-Gate AlGaAs/GaAs HEMT’s

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