Abstract
Ultra-submicrometer-gate AlGaAs/GaAs high-electron-mobility transistors (HEMTs) that have gate lengths ranging from 25 to 85 nm and were fabricated using electron-beam lithographic techniques on epitaxial wafers grown by molecular beam epitaxy are discussed. These devices show that velocity overshoot and short-gate geometry effects play an important role for the gate lengths less than 100 nm. The maximum intrinsic transconductance is 215 mS/mm, and the effective saturated electron velocity reaches 3 × 107 cm/s for a 30-nm HEMT.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 209-211 |
| Number of pages | 3 |
| Journal | Electron device letters |
| Volume | 11 |
| Issue number | 5 |
| State | Published - May 1990 |
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ASJC Scopus subject areas
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Cite this
Ultra-submicrometer-gate AlGaAs/GaAs HEMT's. / Han, Jaeheon; Ferry, David K.; Newman, Peter.
In: Electron device letters, Vol. 11, No. 5, 05.1990, p. 209-211.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ultra-submicrometer-gate AlGaAs/GaAs HEMT's
AU - Han, Jaeheon
AU - Ferry, David K.
AU - Newman, Peter
PY - 1990/5
Y1 - 1990/5
N2 - Ultra-submicrometer-gate AlGaAs/GaAs high-electron-mobility transistors (HEMTs) that have gate lengths ranging from 25 to 85 nm and were fabricated using electron-beam lithographic techniques on epitaxial wafers grown by molecular beam epitaxy are discussed. These devices show that velocity overshoot and short-gate geometry effects play an important role for the gate lengths less than 100 nm. The maximum intrinsic transconductance is 215 mS/mm, and the effective saturated electron velocity reaches 3 × 107 cm/s for a 30-nm HEMT.
AB - Ultra-submicrometer-gate AlGaAs/GaAs high-electron-mobility transistors (HEMTs) that have gate lengths ranging from 25 to 85 nm and were fabricated using electron-beam lithographic techniques on epitaxial wafers grown by molecular beam epitaxy are discussed. These devices show that velocity overshoot and short-gate geometry effects play an important role for the gate lengths less than 100 nm. The maximum intrinsic transconductance is 215 mS/mm, and the effective saturated electron velocity reaches 3 × 107 cm/s for a 30-nm HEMT.
UR - http://www.scopus.com/inward/record.url?scp=0025429848&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0025429848&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0025429848
VL - 11
SP - 209
EP - 211
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 5
ER -