Ultra-Submicrometer-Gate AlGaAs/GaAs HEMT’s

Jaeheon Han, David K. Ferry, Peter Newman

Research output: Contribution to journalArticle

37 Scopus citations

Abstract

Ultra-submicrometer-gate AlGaAs/GaAs high-electron-mobility transistors (HEMT’s) with gate lengths ranging from 25 to 85 nm were fabricated, using electron-beam lithographic techniques on epitaxial wafers grown by molecular beam epitaxy. These devices show that velocity overshoot and short-gate geometry effects play an important role for gate lengths less than 100 nm. The maximum intrinsic transconductance is 215 mS/mm, and the effective saturated electron velocity reaches 3 × 107 cm/s for a 30-nm HEMT.

Original languageEnglish (US)
Pages (from-to)209-211
Number of pages3
JournalIEEE Electron Device Letters
Volume11
Issue number5
DOIs
StatePublished - May 1990

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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