@article{d8a862b644974811809c0fad727215c2,
title = "Ultra-small MOSFETs: The importance of the full Coulomb interaction on device characteristics",
abstract = "We discuss a full three-dimensional model of an ultra-small MOSFET, in which the transport is treated by a coupled EMC and molecular dynamics (MD) procedure to treat the Coulomb interaction in real space. The inclusion of the proper Coulomb interaction affects both the energy and momentum relaxation processes, but also has a dramatic effect on the characteristic curves of the device. We find that the short-range e-e and e-i terms, combined with discrete impurity effects, is also needed for accurate measurement of the device threshold voltage.",
keywords = "Device modeling, Direct Coulomb interaction, Discrete impurities",
author = "Gross, {W. J.} and Dragica Vasileska and Ferry, {D. K.}",
note = "Funding Information: Gross W. J. 1 Vasileska D. 2 Ferry D. K. 2 1 lntel Corp. Chandler, AZ 85226 USA intel.com 2 Department of Electrical Engineering Center for Solid State Electronics Research Arizona State University Tempe, AZ 85287-5706 USA asu.edu 2001 13 1-4 75 78 2001 Copyright {\textcopyright} 2001 Hindawi Publishing Corporation We discuss a full three-dimensional model of an ultra-small MOSFET, in which the transport is treated by a coupled EMC and molecular dynamics (MD) procedure to treat the Coulomb interaction in real space. The inclusion of the proper Coulomb interaction affects both the energy and momentum relaxation processes, but also has a dramatic effect on the characteristic curves of the device. We find that the short-range e – e and e –i terms, combined with discrete impurity effects, is also needed for accurate measurement of the device threshold voltage. Direct Coulomb interaction Device modeling Discrete impurities http://dx.doi.org/10.13039/100000001 National Science Foundation http://dx.doi.org/10.13039/100000006 Office of Naval Research ",
year = "2001",
doi = "10.1155/2001/78780",
language = "English (US)",
volume = "13",
pages = "75--78",
journal = "VLSI Design",
issn = "1065-514X",
publisher = "Hindawi Publishing Corporation",
number = "1-4",
}