Ultra-small MOSFETs: The importance of the full Coulomb interaction on device characteristics

W. J. Gross, Dragica Vasileska, D. K. Ferry

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

We discuss a full three-dimensional model of an ultra-small MOSFET, in which the transport is treated by a coupled EMC and molecular dynamics (MD) procedure to treat the Coulomb interaction in real space. The inclusion of the proper Coulomb interaction affects both the energy and momentum relaxation processes, but also has a dramatic effect on the characteristic curves of the device. We find that the short-range e-e and e-i terms, combined with discrete impurity effects, is also needed for accurate measurement of the device threshold voltage.

Original languageEnglish (US)
Pages (from-to)75-78
Number of pages4
JournalVLSI Design
Volume13
Issue number1-4
DOIs
StatePublished - 2001

Keywords

  • Device modeling
  • Direct Coulomb interaction
  • Discrete impurities

ASJC Scopus subject areas

  • Hardware and Architecture
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

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