Ultra-low-temperature epitaxy of ge-based semiconductors and optoelectronic structures on Si(100): Introducing higher order germanes (Ge 3H 8, Ge 4H 10)
Dive into the research topics of 'Ultra-low-temperature epitaxy of ge-based semiconductors and optoelectronic structures on Si(100): Introducing higher order germanes (Ge 3H 8, Ge 4H 10)'. Together they form a unique fingerprint.