Ultra-low-temperature epitaxy of ge-based semiconductors and optoelectronic structures on Si(100): Introducing higher order germanes (Ge 3H 8, Ge 4H 10)

Gordon Grzybowski, Liying Jiang, Richard T. Beeler, Tylan Watkins, Andrew Chizmeshya, Chi Xu, Jose Menendez, John Kouvetakis

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