Abstract

Ultra-low current resistive switching in sputtered Cu/SiO2/Pt and Cu/SiO2/Ir structures was investigated. Both Cu and SiO 2 are commonplace in silicon integrated circuits and hence the material system is CMOS compatible. The switching characteristics were very similar to those observed in other solid electrolytes so that the mechanism is assumed to be the same, i.e., based on the formation and rupture of a nanoscale Cu filament. The first current voltage sweep serves as a forming step with write currents as low as 10nA. In the subsequent cycles, the write currents could be reduced to as little as 10pA, making this technology an ideal candidate for energy-starved applications. The switching voltage scaled with the delay time of the current-voltage sweep.

Original languageEnglish (US)
Title of host publicationIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
DOIs
StatePublished - Dec 1 2008
EventIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 - Honolulu, HI, United States
Duration: Jun 15 2008Jun 16 2008

Publication series

NameIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

Other

OtherIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
CountryUnited States
CityHonolulu, HI
Period6/15/086/16/08

Keywords

  • Nonvolatile memory
  • Silicon dioxide
  • Solid electrolyte

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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