Abstract

Ultra-low current resistive switching in sputtered Cu/SiO2/Pt and Cu/SiO2/Ir structures was investigated. Both Cu and SiO 2 are commonplace in silicon integrated circuits and hence the material system is CMOS compatible. The switching characteristics were very similar to those observed in other solid electrolytes so that the mechanism is assumed to be the same, i.e., based on the formation and rupture of a nanoscale Cu filament. The first current voltage sweep serves as a forming step with write currents as low as 10nA. In the subsequent cycles, the write currents could be reduced to as little as 10pA, making this technology an ideal candidate for energy-starved applications. The switching voltage scaled with the delay time of the current-voltage sweep.

Original languageEnglish (US)
Title of host publicationIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
DOIs
StatePublished - 2008
EventIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 - Honolulu, HI, United States
Duration: Jun 15 2008Jun 16 2008

Other

OtherIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
CountryUnited States
CityHonolulu, HI
Period6/15/086/16/08

Fingerprint

Data storage equipment
Electric potential
Solid electrolytes
Integrated circuits
Time delay
Silicon

Keywords

  • Nonvolatile memory
  • Silicon dioxide
  • Solid electrolyte

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Schindler, C., Weides, M., Kozicki, M., & Waser, R. (2008). Ultra-low current resistive memory based on Cu-SiO2 In IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 [5418475] https://doi.org/10.1109/SNW.2008.5418475

Ultra-low current resistive memory based on Cu-SiO2 . / Schindler, Christina; Weides, Martin; Kozicki, Michael; Waser, Rainer.

IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008. 2008. 5418475.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Schindler, C, Weides, M, Kozicki, M & Waser, R 2008, Ultra-low current resistive memory based on Cu-SiO2 in IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008., 5418475, IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008, Honolulu, HI, United States, 6/15/08. https://doi.org/10.1109/SNW.2008.5418475
Schindler C, Weides M, Kozicki M, Waser R. Ultra-low current resistive memory based on Cu-SiO2 In IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008. 2008. 5418475 https://doi.org/10.1109/SNW.2008.5418475
Schindler, Christina ; Weides, Martin ; Kozicki, Michael ; Waser, Rainer. / Ultra-low current resistive memory based on Cu-SiO2 IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008. 2008.
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