Ultra-low current resistive memory based on Cu-SiO2

Christina Schindler; Martin Weides; Michael Kozicki; Rainer Waser

doi:10.1109/SNW.2008.5418475

Ultra-low current resistive memory based on Cu-SiO₂

Christina Schindler, Martin Weides, Michael Kozicki, Rainer Waser

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Ultra-low current resistive switching in sputtered Cu/SiO₂/Pt and Cu/SiO₂/Ir structures was investigated. Both Cu and SiO ₂ are commonplace in silicon integrated circuits and hence the material system is CMOS compatible. The switching characteristics were very similar to those observed in other solid electrolytes so that the mechanism is assumed to be the same, i.e., based on the formation and rupture of a nanoscale Cu filament. The first current voltage sweep serves as a forming step with write currents as low as 10nA. In the subsequent cycles, the write currents could be reduced to as little as 10pA, making this technology an ideal candidate for energy-starved applications. The switching voltage scaled with the delay time of the current-voltage sweep.

Original language	English (US)
Title of host publication	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
DOIs	https://doi.org/10.1109/SNW.2008.5418475
State	Published - 2008
Event	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 - Honolulu, HI, United States Duration: Jun 15 2008 → Jun 16 2008

Publication series

Name	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

Other

Other	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
Country/Territory	United States
City	Honolulu, HI
Period	6/15/08 → 6/16/08

Keywords

Nonvolatile memory
Silicon dioxide
Solid electrolyte

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/SNW.2008.5418475

Cite this

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title = "Ultra-low current resistive memory based on Cu-SiO2",

abstract = "Ultra-low current resistive switching in sputtered Cu/SiO2/Pt and Cu/SiO2/Ir structures was investigated. Both Cu and SiO 2 are commonplace in silicon integrated circuits and hence the material system is CMOS compatible. The switching characteristics were very similar to those observed in other solid electrolytes so that the mechanism is assumed to be the same, i.e., based on the formation and rupture of a nanoscale Cu filament. The first current voltage sweep serves as a forming step with write currents as low as 10nA. In the subsequent cycles, the write currents could be reduced to as little as 10pA, making this technology an ideal candidate for energy-starved applications. The switching voltage scaled with the delay time of the current-voltage sweep.",

keywords = "Nonvolatile memory, Silicon dioxide, Solid electrolyte",

author = "Christina Schindler and Martin Weides and Michael Kozicki and Rainer Waser",

year = "2008",

doi = "10.1109/SNW.2008.5418475",

language = "English (US)",

isbn = "9781424420711",

series = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008",

booktitle = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008",

note = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 ; Conference date: 15-06-2008 Through 16-06-2008",

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TY - GEN

T1 - Ultra-low current resistive memory based on Cu-SiO2

AU - Schindler, Christina

AU - Weides, Martin

AU - Kozicki, Michael

AU - Waser, Rainer

PY - 2008

Y1 - 2008

N2 - Ultra-low current resistive switching in sputtered Cu/SiO2/Pt and Cu/SiO2/Ir structures was investigated. Both Cu and SiO 2 are commonplace in silicon integrated circuits and hence the material system is CMOS compatible. The switching characteristics were very similar to those observed in other solid electrolytes so that the mechanism is assumed to be the same, i.e., based on the formation and rupture of a nanoscale Cu filament. The first current voltage sweep serves as a forming step with write currents as low as 10nA. In the subsequent cycles, the write currents could be reduced to as little as 10pA, making this technology an ideal candidate for energy-starved applications. The switching voltage scaled with the delay time of the current-voltage sweep.

AB - Ultra-low current resistive switching in sputtered Cu/SiO2/Pt and Cu/SiO2/Ir structures was investigated. Both Cu and SiO 2 are commonplace in silicon integrated circuits and hence the material system is CMOS compatible. The switching characteristics were very similar to those observed in other solid electrolytes so that the mechanism is assumed to be the same, i.e., based on the formation and rupture of a nanoscale Cu filament. The first current voltage sweep serves as a forming step with write currents as low as 10nA. In the subsequent cycles, the write currents could be reduced to as little as 10pA, making this technology an ideal candidate for energy-starved applications. The switching voltage scaled with the delay time of the current-voltage sweep.

KW - Nonvolatile memory

KW - Silicon dioxide

KW - Solid electrolyte

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