Ultra-high speed memory bus using microwave interconnects

James Aberle, Brahim Bensalem

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

A new memory bus concept that has the potential to dramatically improve double data rate (DDR) memory speed is presented. The memory signal is modulated onto an RF carrier which is routed using substrate integrated waveguide (SIW) interconnect technology. The channel is divided into multi-carrier bands where each symbol is modulated onto one carrier using 64-QAM format. The conventional DDR bus is entirely mapped into the proposed multi-carrier memory channel architecture (MCMCA). At the receiver the signal is demodulated and then delivered to SDRAM devices. Experimental characterization of the new channel shows that by using judicious frequency division multiplexing, as few as one SIW is sufficient to transmit the 64 DDR bits. Overall aggregated bus data rate achieves 30 Gbps data transfer with error vector magnitude (EVM) not exceeding 2.26% and phase error of 1.07 degree or less.

Original languageEnglish (US)
Title of host publication2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2012
Pages3-6
Number of pages4
DOIs
Publication statusPublished - 2012
Event2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2012 - Tempe, AZ, United States
Duration: Oct 21 2012Oct 24 2012

Other

Other2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2012
CountryUnited States
CityTempe, AZ
Period10/21/1210/24/12

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Keywords

  • DDR Memory
  • Memory Wall
  • Signal Integrity
  • SIW

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Aberle, J., & Bensalem, B. (2012). Ultra-high speed memory bus using microwave interconnects. In 2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2012 (pp. 3-6). [6457830] https://doi.org/10.1109/EPEPS.2012.6457830