Type-I Ge/Ge 1-x-ySi xSn y strained-layer heterostructures with a direct Ge bandgap

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Abstract

The investigation of the electronic properties of Ge/Ge 1-x-ySi xSn y strained-layer heterostructures was presented. It was observed that a lattice-matched system with fully strained Ge layers and relaxed Ge 1-x-ySi xSn y alloy can have a direct fundamental bandgap with spatial localization in the Ge layers. The band lineups in Ge/Ge 1-x-ySi xSn y were calculated by using a method, which was a generalization of Van de Walle's approach. It was found that Si also reduces the tensile strain on the Ge layer.

Original languageEnglish (US)
Pages (from-to)1175-1177
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number7
DOIs
StatePublished - Aug 16 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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