The investigation of the electronic properties of Ge/Ge 1-x-ySi xSn y strained-layer heterostructures was presented. It was observed that a lattice-matched system with fully strained Ge layers and relaxed Ge 1-x-ySi xSn y alloy can have a direct fundamental bandgap with spatial localization in the Ge layers. The band lineups in Ge/Ge 1-x-ySi xSn y were calculated by using a method, which was a generalization of Van de Walle's approach. It was found that Si also reduces the tensile strain on the Ge layer.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)