We describe the fabrication and operation of a polysilicon room-temperature memory device. The source-drain current-voltage (I-V) characteristics of this device, with floating gate, demonstrate periodic current steps as well as hysteresis generic for a memory device. Electron micrographs show that the channel consists of 3-5 nm silicon grains. A model of single charge trapping controlled conduction through the device channel is suggested.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry