Two-terminal nanocrystalline silicon memory device at room temperature

A. H M Kamal, J. Lutzen, B. A. Sanborn, M. V. Sidorov, Michael Kozicki, David Smith, D. K. Ferry

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

We describe the fabrication and operation of a polysilicon room-temperature memory device. The source-drain current-voltage (I-V) characteristics of this device, with floating gate, demonstrate periodic current steps as well as hysteresis generic for a memory device. Electron micrographs show that the channel consists of 3-5 nm silicon grains. A model of single charge trapping controlled conduction through the device channel is suggested.

Original languageEnglish (US)
Pages (from-to)1328-1332
Number of pages5
JournalSemiconductor Science and Technology
Volume13
Issue number11
DOIs
StatePublished - Nov 1 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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