Abstract
ASU researchers have developed a method for producing high quality GaN powder by combining high purity gallium and high purity ammonia in a tube reactor under controlled conditions. A reaction between the ammonia and gallium under the controlled conditions produces a porous gallium melt and a full reaction, yielding high purity crystalline GaN powders with a stoichiometroc nitrogen concentration and a hexagonal wurtzite structure. These powders are well suited for use in electroluminescent devices.
| Original language | English (US) |
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| State | Published - Sep 25 2003 |