Two-Step Process for Direct Synthesis of Gallium Nitride Powders

Fernando Ponce (Inventor)

Research output: Patent

Abstract

ASU researchers have developed a method for producing high quality GaN powder by combining high purity gallium and high purity ammonia in a tube reactor under controlled conditions. A reaction between the ammonia and gallium under the controlled conditions produces a porous gallium melt and a full reaction, yielding high purity crystalline GaN powders with a stoichiometroc nitrogen concentration and a hexagonal wurtzite structure. These powders are well suited for use in electroluminescent devices.
Original languageEnglish (US)
StatePublished - Sep 25 2003

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Gallium
Powders
Ammonia
Luminescent devices
Nitrogen
Crystalline materials
gallium nitride

Cite this

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abstract = "ASU researchers have developed a method for producing high quality GaN powder by combining high purity gallium and high purity ammonia in a tube reactor under controlled conditions. A reaction between the ammonia and gallium under the controlled conditions produces a porous gallium melt and a full reaction, yielding high purity crystalline GaN powders with a stoichiometroc nitrogen concentration and a hexagonal wurtzite structure. These powders are well suited for use in electroluminescent devices.",
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AB - ASU researchers have developed a method for producing high quality GaN powder by combining high purity gallium and high purity ammonia in a tube reactor under controlled conditions. A reaction between the ammonia and gallium under the controlled conditions produces a porous gallium melt and a full reaction, yielding high purity crystalline GaN powders with a stoichiometroc nitrogen concentration and a hexagonal wurtzite structure. These powders are well suited for use in electroluminescent devices.

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