TWO-DIMENSIONAL SIMULATION OF A COOLED, SUBMICROMETER INDIUM ARSENIDE SCHOTTKY-GATE FET.

Robert K. Reich, David K. Ferry

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A two-dimensional simulation of an InAs, Schottky-gate FET operated at 77 K is reported. A device of 0. 25- mu m source-drain spacing is assumed. The full field-dependent mobility is treated. The results suggest that such a device would have performance characteristics comparable even to Josephson junctions for high-speed low-power logic applications.

Original languageEnglish (US)
Pages (from-to)1062-1065
Number of pages4
JournalIEEE Transactions on Electron Devices
VolumeED-27
Issue number6
StatePublished - Jun 1980
Externally publishedYes

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Indium arsenide
GARP Atlantic Tropical Experiment
Field effect transistors
indium
field effect transistors
Josephson junctions
logic
simulation
spacing
high speed
indium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

TWO-DIMENSIONAL SIMULATION OF A COOLED, SUBMICROMETER INDIUM ARSENIDE SCHOTTKY-GATE FET. / Reich, Robert K.; Ferry, David K.

In: IEEE Transactions on Electron Devices, Vol. ED-27, No. 6, 06.1980, p. 1062-1065.

Research output: Contribution to journalArticle

Reich, Robert K. ; Ferry, David K. / TWO-DIMENSIONAL SIMULATION OF A COOLED, SUBMICROMETER INDIUM ARSENIDE SCHOTTKY-GATE FET. In: IEEE Transactions on Electron Devices. 1980 ; Vol. ED-27, No. 6. pp. 1062-1065.
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