Two dimensional phase separation for Co adsorbed on Si(111)

R. J. Phaneuf, Y. Hong, S. Horch, Peter Bennett

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

We have used low energy electron microscopy to monitor the high-temperature behavior of surface phases in the Co/Si(111) system at submonolayer coverages. We observe a reversible phase separation from a disordered "(1 × 1)" phase to well-defined coexisting regions of ordered (7 × 7)-reconstructed and disordered phases. The transition temperature is depressed by nearly 200 °C by the addition of 0.1 monolayer of cobalt. The shape of the coverage-temperature phase boundary allows us to estimate the latent heat of the (7 × 7) order-disorder transition.

Original languageEnglish (US)
Pages (from-to)4605-4608
Number of pages4
JournalPhysical Review Letters
Volume78
Issue number24
StatePublished - 1997

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latent heat
electron microscopy
cobalt
transition temperature
disorders
estimates
temperature
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Phaneuf, R. J., Hong, Y., Horch, S., & Bennett, P. (1997). Two dimensional phase separation for Co adsorbed on Si(111). Physical Review Letters, 78(24), 4605-4608.

Two dimensional phase separation for Co adsorbed on Si(111). / Phaneuf, R. J.; Hong, Y.; Horch, S.; Bennett, Peter.

In: Physical Review Letters, Vol. 78, No. 24, 1997, p. 4605-4608.

Research output: Contribution to journalArticle

Phaneuf, RJ, Hong, Y, Horch, S & Bennett, P 1997, 'Two dimensional phase separation for Co adsorbed on Si(111)', Physical Review Letters, vol. 78, no. 24, pp. 4605-4608.
Phaneuf, R. J. ; Hong, Y. ; Horch, S. ; Bennett, Peter. / Two dimensional phase separation for Co adsorbed on Si(111). In: Physical Review Letters. 1997 ; Vol. 78, No. 24. pp. 4605-4608.
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