TY - JOUR
T1 - Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies
AU - Esqueda, Ivan Sanchez
AU - Barnaby, Hugh
AU - Alles, Michael L.
N1 - Funding Information:
Manuscript received July 8, 2005; revised August 26, 2005. This work was supported in part through the Defense Advanced Research Projects Agency (DARPA) Radiation Hardened by Design Program, subaward no. 17068-S1 BS123456, and Boeing Corporation through the DARPA-RHBD program. I. Sanchez Esqueda is with Arizona State University, Tempe, AZ 85287-5706 USA (e-mail: ivans@asu.edu). Hugh J. Barnaby is with the Arizona State University, Tempe, AZ 85287-5706, USA. M. L. Alles is with the Institute of Space and Defense Electronics, Vanderbilt University, Nashville, TN 37235 USA. Digital Object Identifier 10.1109/TNS.2005.860671 Fig. 1. (a) Illustration of drain-source leakage path in nFET and (b) its cause: oxide trapped charge buildup in the isolation oxide (assumed interfacial sheet charge) [5].
PY - 2005/12
Y1 - 2005/12
N2 - A modeling approach using two-dimensional device simulations is presented, which enables the extraction of parameters for the radiation-induced parasitic MOSFET created at the edge of the shallow trench isolation (STI) oxide. With the model, one can estimate drain-to-source off-state leakage current (I OFF) resulting from build-up of oxide trapped charge (N OT). The impact of nonuniform N OT build-up in the STI resulting from total ionizing dose (TID) exposure and external bias conditions is analyzed through volumetric simulations and compared to experimental data. Saturation for the off-state leakage current as a function of trapped charge is also investigated.
AB - A modeling approach using two-dimensional device simulations is presented, which enables the extraction of parameters for the radiation-induced parasitic MOSFET created at the edge of the shallow trench isolation (STI) oxide. With the model, one can estimate drain-to-source off-state leakage current (I OFF) resulting from build-up of oxide trapped charge (N OT). The impact of nonuniform N OT build-up in the STI resulting from total ionizing dose (TID) exposure and external bias conditions is analyzed through volumetric simulations and compared to experimental data. Saturation for the off-state leakage current as a function of trapped charge is also investigated.
KW - MOSFET
KW - Off-state leakage current (I )
KW - Oxide trapped charge (N )
KW - Shallow trench isolation (STI)
KW - Total ionizing dose (TID)
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U2 - 10.1109/TNS.2005.860671
DO - 10.1109/TNS.2005.860671
M3 - Article
AN - SCOPUS:33144468202
SN - 0018-9499
VL - 52
SP - 2259
EP - 2264
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
IS - 6
ER -