Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies

Ivan Sanchez Esqueda, Hugh Barnaby, Michael L. Alles

Research output: Contribution to journalArticle

68 Scopus citations

Abstract

A modeling approach using two-dimensional device simulations is presented, which enables the extraction of parameters for the radiation-induced parasitic MOSFET created at the edge of the shallow trench isolation (STI) oxide. With the model, one can estimate drain-to-source off-state leakage current (I OFF) resulting from build-up of oxide trapped charge (N OT). The impact of nonuniform N OT build-up in the STI resulting from total ionizing dose (TID) exposure and external bias conditions is analyzed through volumetric simulations and compared to experimental data. Saturation for the off-state leakage current as a function of trapped charge is also investigated.

Original languageEnglish (US)
Pages (from-to)2259-2264
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume52
Issue number6
DOIs
StatePublished - Dec 1 2005

Keywords

  • MOSFET
  • Off-state leakage current (I )
  • Oxide trapped charge (N )
  • Shallow trench isolation (STI)
  • Total ionizing dose (TID)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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