Two-dimensional electrical characterization of ultrashallow source/drain extensions for nanoscale MOSFETs

Physics & Astronomy

• field effect transistors 100%
• characterization 70%
• masks 46%
• nitrides 33%
• thermal diffusion 20%
• secondary ion mass spectrometry 18%
• semiconductor devices 18%
• holography 17%
• oxides 11%
• electrons 7%

Engineering & Materials Science

• Masks 51%
• Nitrides 43%
• Electron holography 41%
• Doping (additives) 40%
• Secondary ion mass spectrometry 27%
• Thermal diffusion 24%
• Semiconductor devices 21%
• Oxides 15%
• Substrates 12%

Chemical Compounds

• Diffusion 78%
• Nitride 35%
• Thermal Diffusion 24%
• Doping Material 16%
• Semiconductor 13%
• Electron Particle 9%
• Oxide 9%