Abstract

State-of-the-art semiconductor devices require accurate control of the full two-dimensional dopant distribution. In this work, we report results obtained on 2D electrical characterization of ultra shallow junctions in Si using off axis electron holography to study two-dimensional effects on diffusion. In particular, the effect of a nitride diffusion mask on lateral diffusion of phosphorous is discussed. Retardation of lateral diffusion of P under the nitride diffusion mask is observed and compared to the lateral diffusion of P under an oxide diffusion mask. The ultra shallow junctions for the study were fabricated by a rapid thermal diffusion process from heavily P doped spin-on-dopants into a heavily B doped Si substrate. These shallow junctions are needed for fabricating source/drain extensions in nanoscale MOSFETs. One-dimensional electrical characterization of the junction was carried out to determine the electrical junction depth and compared to the metallurgical junction depth from SIMS analysis.

Original languageEnglish (US)
Pages (from-to)301-310
Number of pages10
JournalSuperlattices and Microstructures
Volume34
Issue number3-6
DOIs
StatePublished - Sep 1 2003

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Keywords

  • 2D characterization
  • Dopant activation
  • Electron holography
  • Lateral abruptness
  • Lateral diffusion
  • Nitride spacer
  • Phosphorous diffusion
  • Rapid thermal diffusion
  • Space charge region
  • Ultra shallow junctions

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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