Tunneling carrier escape from InAs self-assembled quantum dots

J. Ibáñez, R. Leon, D. T. Vu, S. Chaparro, Shane Johnson, C. Navarro, Yong-Hang Zhang

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Deep-level transient spectroscopy measurements in InAs quantum dots (QDs) grown in both n-GaAs and p-GaAs show that tunneling is an important mechanism of carrier escape from the dots. The doping level in the barrier strongly affects the tunneling emission rates, enabling or preventing the detection of a transient capacitance signal from a given QD level. The relative intensity of this signal acquired with different rate windows allows the estimation of tunneling emission energies.

Original languageEnglish (US)
Pages (from-to)2013-2015
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number13
DOIs
StatePublished - Sep 24 2001

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escape
quantum dots
capacitance
spectroscopy
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Tunneling carrier escape from InAs self-assembled quantum dots. / Ibáñez, J.; Leon, R.; Vu, D. T.; Chaparro, S.; Johnson, Shane; Navarro, C.; Zhang, Yong-Hang.

In: Applied Physics Letters, Vol. 79, No. 13, 24.09.2001, p. 2013-2015.

Research output: Contribution to journalArticle

Ibáñez, J, Leon, R, Vu, DT, Chaparro, S, Johnson, S, Navarro, C & Zhang, Y-H 2001, 'Tunneling carrier escape from InAs self-assembled quantum dots', Applied Physics Letters, vol. 79, no. 13, pp. 2013-2015. https://doi.org/10.1063/1.1402642
Ibáñez J, Leon R, Vu DT, Chaparro S, Johnson S, Navarro C et al. Tunneling carrier escape from InAs self-assembled quantum dots. Applied Physics Letters. 2001 Sep 24;79(13):2013-2015. https://doi.org/10.1063/1.1402642
Ibáñez, J. ; Leon, R. ; Vu, D. T. ; Chaparro, S. ; Johnson, Shane ; Navarro, C. ; Zhang, Yong-Hang. / Tunneling carrier escape from InAs self-assembled quantum dots. In: Applied Physics Letters. 2001 ; Vol. 79, No. 13. pp. 2013-2015.
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