Tunneling carrier escape from InAs self-assembled quantum dots

J. Ibáñez, R. Leon, D. T. Vu, S. Chaparro, Shane Johnson, C. Navarro, Yong-Hang Zhang

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

Deep-level transient spectroscopy measurements in InAs quantum dots (QDs) grown in both n-GaAs and p-GaAs show that tunneling is an important mechanism of carrier escape from the dots. The doping level in the barrier strongly affects the tunneling emission rates, enabling or preventing the detection of a transient capacitance signal from a given QD level. The relative intensity of this signal acquired with different rate windows allows the estimation of tunneling emission energies.

Original languageEnglish (US)
Pages (from-to)2013-2015
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number13
DOIs
StatePublished - Sep 24 2001

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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