Tunneling carrier escape from InAs self-assembled quantum dots

J. Ibáñez; R. Leon; D. T. Vu; S. Chaparro; Shane Johnson; C. Navarro; Yong-Hang Zhang

doi:10.1063/1.1402642

Tunneling carrier escape from InAs self-assembled quantum dots

J. Ibáñez, R. Leon, D. T. Vu, S. Chaparro, Shane Johnson, C. Navarro, Yong-Hang Zhang

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Deep-level transient spectroscopy measurements in InAs quantum dots (QDs) grown in both n-GaAs and p-GaAs show that tunneling is an important mechanism of carrier escape from the dots. The doping level in the barrier strongly affects the tunneling emission rates, enabling or preventing the detection of a transient capacitance signal from a given QD level. The relative intensity of this signal acquired with different rate windows allows the estimation of tunneling emission energies.

Original language	English (US)
Pages (from-to)	2013-2015
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	13
DOIs	https://doi.org/10.1063/1.1402642
State	Published - Sep 24 2001

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1402642

Cite this

@article{52e7016ada794c69a074a848e33dbf23,

title = "Tunneling carrier escape from InAs self-assembled quantum dots",

abstract = "Deep-level transient spectroscopy measurements in InAs quantum dots (QDs) grown in both n-GaAs and p-GaAs show that tunneling is an important mechanism of carrier escape from the dots. The doping level in the barrier strongly affects the tunneling emission rates, enabling or preventing the detection of a transient capacitance signal from a given QD level. The relative intensity of this signal acquired with different rate windows allows the estimation of tunneling emission energies.",

author = "J. Ib{\'a}{\~n}ez and R. Leon and Vu, {D. T.} and S. Chaparro and Shane Johnson and C. Navarro and Yong-Hang Zhang",

year = "2001",

month = sep,

day = "24",

doi = "10.1063/1.1402642",

language = "English (US)",

volume = "79",

pages = "2013--2015",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "13",

}

TY - JOUR

T1 - Tunneling carrier escape from InAs self-assembled quantum dots

AU - Ibáñez, J.

AU - Leon, R.

AU - Vu, D. T.

AU - Chaparro, S.

AU - Johnson, Shane

AU - Navarro, C.

AU - Zhang, Yong-Hang

PY - 2001/9/24

Y1 - 2001/9/24

N2 - Deep-level transient spectroscopy measurements in InAs quantum dots (QDs) grown in both n-GaAs and p-GaAs show that tunneling is an important mechanism of carrier escape from the dots. The doping level in the barrier strongly affects the tunneling emission rates, enabling or preventing the detection of a transient capacitance signal from a given QD level. The relative intensity of this signal acquired with different rate windows allows the estimation of tunneling emission energies.

AB - Deep-level transient spectroscopy measurements in InAs quantum dots (QDs) grown in both n-GaAs and p-GaAs show that tunneling is an important mechanism of carrier escape from the dots. The doping level in the barrier strongly affects the tunneling emission rates, enabling or preventing the detection of a transient capacitance signal from a given QD level. The relative intensity of this signal acquired with different rate windows allows the estimation of tunneling emission energies.

UR - http://www.scopus.com/inward/record.url?scp=0035943827&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035943827&partnerID=8YFLogxK

U2 - 10.1063/1.1402642

DO - 10.1063/1.1402642

M3 - Article

AN - SCOPUS:0035943827

SN - 0003-6951

VL - 79

SP - 2013

EP - 2015

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Tunneling carrier escape from InAs self-assembled quantum dots

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this