Tuning the optical and electrical properties of MoS2 by selective Ag photo-reduction

Eunpa Kim, Yoonkyung Lee, Changhyun Ko, Yunjeong Park, Junyeob Yeo, Yabin Chen, Hwan Sung Choe, Frances I. Allen, Junsuk Rho, Sefaattin Tongay, Junqiao Wu, Kyunghoon Kim, Costas P. Grigoropoulos

Research output: Contribution to journalArticle

Abstract

Two-dimensional transition metal dichalcogenides have demonstrated potential for advanced electrical and optoelectronic applications. For these applications, it is necessary to modify their electrical or optoelectronic properties. Doping is one of the most prevalent techniques to modify the band structure of semiconductor materials. Herein, we report the p-type doping effect on few-layer and multi-layer MoS2 that are selectively decorated with Ag nanoparticles via laser-assisted direct photoexcitation of MoS2 exposed in AgNO3 solution. This method can control the doping level by varying the duration of the laser irradiation, which is confirmed by the observed gradual rise of MoS2 device channel resistance and photoluminescence spectra enhancement. This study demonstrated a simple, controllable, and selective doping technique using laser-assisted photo-reduction.

Original languageEnglish (US)
Article number013105
JournalApplied Physics Letters
Volume113
Issue number1
DOIs
StatePublished - Jul 2 2018

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photochemical reactions
electrical properties
tuning
optical properties
lasers
photoexcitation
transition metals
photoluminescence
nanoparticles
irradiation
augmentation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, E., Lee, Y., Ko, C., Park, Y., Yeo, J., Chen, Y., ... Grigoropoulos, C. P. (2018). Tuning the optical and electrical properties of MoS2 by selective Ag photo-reduction. Applied Physics Letters, 113(1), [013105]. https://doi.org/10.1063/1.5022705

Tuning the optical and electrical properties of MoS2 by selective Ag photo-reduction. / Kim, Eunpa; Lee, Yoonkyung; Ko, Changhyun; Park, Yunjeong; Yeo, Junyeob; Chen, Yabin; Sung Choe, Hwan; Allen, Frances I.; Rho, Junsuk; Tongay, Sefaattin; Wu, Junqiao; Kim, Kyunghoon; Grigoropoulos, Costas P.

In: Applied Physics Letters, Vol. 113, No. 1, 013105, 02.07.2018.

Research output: Contribution to journalArticle

Kim, E, Lee, Y, Ko, C, Park, Y, Yeo, J, Chen, Y, Sung Choe, H, Allen, FI, Rho, J, Tongay, S, Wu, J, Kim, K & Grigoropoulos, CP 2018, 'Tuning the optical and electrical properties of MoS2 by selective Ag photo-reduction', Applied Physics Letters, vol. 113, no. 1, 013105. https://doi.org/10.1063/1.5022705
Kim, Eunpa ; Lee, Yoonkyung ; Ko, Changhyun ; Park, Yunjeong ; Yeo, Junyeob ; Chen, Yabin ; Sung Choe, Hwan ; Allen, Frances I. ; Rho, Junsuk ; Tongay, Sefaattin ; Wu, Junqiao ; Kim, Kyunghoon ; Grigoropoulos, Costas P. / Tuning the optical and electrical properties of MoS2 by selective Ag photo-reduction. In: Applied Physics Letters. 2018 ; Vol. 113, No. 1.
@article{46aaef7a33a34469b2dfd2b0530595bb,
title = "Tuning the optical and electrical properties of MoS2 by selective Ag photo-reduction",
abstract = "Two-dimensional transition metal dichalcogenides have demonstrated potential for advanced electrical and optoelectronic applications. For these applications, it is necessary to modify their electrical or optoelectronic properties. Doping is one of the most prevalent techniques to modify the band structure of semiconductor materials. Herein, we report the p-type doping effect on few-layer and multi-layer MoS2 that are selectively decorated with Ag nanoparticles via laser-assisted direct photoexcitation of MoS2 exposed in AgNO3 solution. This method can control the doping level by varying the duration of the laser irradiation, which is confirmed by the observed gradual rise of MoS2 device channel resistance and photoluminescence spectra enhancement. This study demonstrated a simple, controllable, and selective doping technique using laser-assisted photo-reduction.",
author = "Eunpa Kim and Yoonkyung Lee and Changhyun Ko and Yunjeong Park and Junyeob Yeo and Yabin Chen and {Sung Choe}, Hwan and Allen, {Frances I.} and Junsuk Rho and Sefaattin Tongay and Junqiao Wu and Kyunghoon Kim and Grigoropoulos, {Costas P.}",
year = "2018",
month = "7",
day = "2",
doi = "10.1063/1.5022705",
language = "English (US)",
volume = "113",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

TY - JOUR

T1 - Tuning the optical and electrical properties of MoS2 by selective Ag photo-reduction

AU - Kim, Eunpa

AU - Lee, Yoonkyung

AU - Ko, Changhyun

AU - Park, Yunjeong

AU - Yeo, Junyeob

AU - Chen, Yabin

AU - Sung Choe, Hwan

AU - Allen, Frances I.

AU - Rho, Junsuk

AU - Tongay, Sefaattin

AU - Wu, Junqiao

AU - Kim, Kyunghoon

AU - Grigoropoulos, Costas P.

PY - 2018/7/2

Y1 - 2018/7/2

N2 - Two-dimensional transition metal dichalcogenides have demonstrated potential for advanced electrical and optoelectronic applications. For these applications, it is necessary to modify their electrical or optoelectronic properties. Doping is one of the most prevalent techniques to modify the band structure of semiconductor materials. Herein, we report the p-type doping effect on few-layer and multi-layer MoS2 that are selectively decorated with Ag nanoparticles via laser-assisted direct photoexcitation of MoS2 exposed in AgNO3 solution. This method can control the doping level by varying the duration of the laser irradiation, which is confirmed by the observed gradual rise of MoS2 device channel resistance and photoluminescence spectra enhancement. This study demonstrated a simple, controllable, and selective doping technique using laser-assisted photo-reduction.

AB - Two-dimensional transition metal dichalcogenides have demonstrated potential for advanced electrical and optoelectronic applications. For these applications, it is necessary to modify their electrical or optoelectronic properties. Doping is one of the most prevalent techniques to modify the band structure of semiconductor materials. Herein, we report the p-type doping effect on few-layer and multi-layer MoS2 that are selectively decorated with Ag nanoparticles via laser-assisted direct photoexcitation of MoS2 exposed in AgNO3 solution. This method can control the doping level by varying the duration of the laser irradiation, which is confirmed by the observed gradual rise of MoS2 device channel resistance and photoluminescence spectra enhancement. This study demonstrated a simple, controllable, and selective doping technique using laser-assisted photo-reduction.

UR - http://www.scopus.com/inward/record.url?scp=85049756762&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85049756762&partnerID=8YFLogxK

U2 - 10.1063/1.5022705

DO - 10.1063/1.5022705

M3 - Article

AN - SCOPUS:85049756762

VL - 113

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

M1 - 013105

ER -