Tungsten-titanium diffusion barriers for silver metallization

Shekhar Bhagat; Hauk Han; Terry Alford

doi:10.1016/j.tsf.2006.03.049

Tungsten-titanium diffusion barriers for silver metallization

Shekhar Bhagat, Hauk Han, Terry Alford

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

Diffusion barrier properties and thermal stability of reactive sputtered W-Ti films between Ag and Si were studied using X-ray diffractometry, X-ray fluorescence spectrometry, Rutherford backscattering spectrometry, four point probe analysis, and field emission scanning electron microscopy. These films were annealed in vacuum at different temperatures for 1 h. Silver layers were found to be stable up to 600 °C; after which, Ag agglomerated at 700 °C. Rutherford backscattering analysis showed that interfacial reactions took place at temperatures higher than 400 °C. Four point probe resistivity measurements showed that the films were stable up to 600 °C. At 700 °C the resistivity increased abnormally. These results support further investigation of W-Ti films as a potential barrier layer for Ag metallization in the high temperature electronics.

Original language	English (US)
Pages (from-to)	1998-2002
Number of pages	5
Journal	Thin Solid Films
Volume	515
Issue number	4
DOIs	https://doi.org/10.1016/j.tsf.2006.03.049
State	Published - Dec 5 2006

Keywords

Diffusion barrier
Silver metallization
Titanium
Tungsten

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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@article{800bb122552646fe9ccfdd5416ebc393,

title = "Tungsten-titanium diffusion barriers for silver metallization",

abstract = "Diffusion barrier properties and thermal stability of reactive sputtered W-Ti films between Ag and Si were studied using X-ray diffractometry, X-ray fluorescence spectrometry, Rutherford backscattering spectrometry, four point probe analysis, and field emission scanning electron microscopy. These films were annealed in vacuum at different temperatures for 1 h. Silver layers were found to be stable up to 600 °C; after which, Ag agglomerated at 700 °C. Rutherford backscattering analysis showed that interfacial reactions took place at temperatures higher than 400 °C. Four point probe resistivity measurements showed that the films were stable up to 600 °C. At 700 °C the resistivity increased abnormally. These results support further investigation of W-Ti films as a potential barrier layer for Ag metallization in the high temperature electronics.",

keywords = "Diffusion barrier, Silver metallization, Titanium, Tungsten",

author = "Shekhar Bhagat and Hauk Han and Terry Alford",

note = "Funding Information: This work was partially supported by the National Science Foundation (L. Hess, Grant No. DMR-0308127) to whom the authors are greatly indebted. The authors would like to thank Dr. J. W. Mayer, Mr. D. Thompson and Mr. T. Leo from Arizona State University for their fruitful discussions and contributions in this project.",

year = "2006",

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doi = "10.1016/j.tsf.2006.03.049",

language = "English (US)",

volume = "515",

pages = "1998--2002",

journal = "Thin Solid Films",

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TY - JOUR

T1 - Tungsten-titanium diffusion barriers for silver metallization

AU - Bhagat, Shekhar

AU - Han, Hauk

AU - Alford, Terry

N1 - Funding Information: This work was partially supported by the National Science Foundation (L. Hess, Grant No. DMR-0308127) to whom the authors are greatly indebted. The authors would like to thank Dr. J. W. Mayer, Mr. D. Thompson and Mr. T. Leo from Arizona State University for their fruitful discussions and contributions in this project.

PY - 2006/12/5

Y1 - 2006/12/5

N2 - Diffusion barrier properties and thermal stability of reactive sputtered W-Ti films between Ag and Si were studied using X-ray diffractometry, X-ray fluorescence spectrometry, Rutherford backscattering spectrometry, four point probe analysis, and field emission scanning electron microscopy. These films were annealed in vacuum at different temperatures for 1 h. Silver layers were found to be stable up to 600 °C; after which, Ag agglomerated at 700 °C. Rutherford backscattering analysis showed that interfacial reactions took place at temperatures higher than 400 °C. Four point probe resistivity measurements showed that the films were stable up to 600 °C. At 700 °C the resistivity increased abnormally. These results support further investigation of W-Ti films as a potential barrier layer for Ag metallization in the high temperature electronics.

AB - Diffusion barrier properties and thermal stability of reactive sputtered W-Ti films between Ag and Si were studied using X-ray diffractometry, X-ray fluorescence spectrometry, Rutherford backscattering spectrometry, four point probe analysis, and field emission scanning electron microscopy. These films were annealed in vacuum at different temperatures for 1 h. Silver layers were found to be stable up to 600 °C; after which, Ag agglomerated at 700 °C. Rutherford backscattering analysis showed that interfacial reactions took place at temperatures higher than 400 °C. Four point probe resistivity measurements showed that the films were stable up to 600 °C. At 700 °C the resistivity increased abnormally. These results support further investigation of W-Ti films as a potential barrier layer for Ag metallization in the high temperature electronics.

KW - Diffusion barrier

KW - Silver metallization

KW - Titanium

KW - Tungsten

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DO - 10.1016/j.tsf.2006.03.049

M3 - Article

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SN - 0040-6090

VL - 515

SP - 1998

EP - 2002

JO - Thin Solid Films

JF - Thin Solid Films

IS - 4

ER -

Tungsten-titanium diffusion barriers for silver metallization

Abstract

Keywords

ASJC Scopus subject areas

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