Abstract

Diffusion barrier properties and thermal stability of reactive sputtered W-Ti films between Ag and Si were studied using X-ray diffractometry, X-ray fluorescence spectrometry, Rutherford backscattering spectrometry, four point probe analysis, and field emission scanning electron microscopy. These films were annealed in vacuum at different temperatures for 1 h. Silver layers were found to be stable up to 600 °C; after which, Ag agglomerated at 700 °C. Rutherford backscattering analysis showed that interfacial reactions took place at temperatures higher than 400 °C. Four point probe resistivity measurements showed that the films were stable up to 600 °C. At 700 °C the resistivity increased abnormally. These results support further investigation of W-Ti films as a potential barrier layer for Ag metallization in the high temperature electronics.

Original languageEnglish (US)
Pages (from-to)1998-2002
Number of pages5
JournalThin Solid Films
Volume515
Issue number4
DOIs
StatePublished - Dec 5 2006

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Keywords

  • Diffusion barrier
  • Silver metallization
  • Titanium
  • Tungsten

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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