Tungsten as a CMOS compatible catalyst for the Metal-assisted Chemical Etching of silicon to create 2D and 3D nanostructures

Owen Hildreth, Carlos Alvarez, C. P. Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This paper demonstrates the use of tungsten as a viable, low cost catalyst for Metal-assisted Chemical Etching (MaCE) of silicon to create high aspect ratio nanostructures in silicon. The effect of etchant composition and etching time is reported along with Scanning Electron Microscope (SEM) and Atomic Force Microscopy (AFM) images confirming that tungsten acted as a catalyst for MaCE.

Original languageEnglish (US)
Title of host publication2010 Proceedings 60th Electronic Components and Technology Conference, ECTC 2010
Pages794-797
Number of pages4
DOIs
StatePublished - Aug 9 2010
Event60th Electronic Components and Technology Conference, ECTC 2010 - Las Vegas, NV, United States
Duration: Jun 1 2010Jun 4 2010

Publication series

NameProceedings - Electronic Components and Technology Conference
ISSN (Print)0569-5503

Other

Other60th Electronic Components and Technology Conference, ECTC 2010
CountryUnited States
CityLas Vegas, NV
Period6/1/106/4/10

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Hildreth, O., Alvarez, C., & Wong, C. P. (2010). Tungsten as a CMOS compatible catalyst for the Metal-assisted Chemical Etching of silicon to create 2D and 3D nanostructures. In 2010 Proceedings 60th Electronic Components and Technology Conference, ECTC 2010 (pp. 794-797). [5490739] (Proceedings - Electronic Components and Technology Conference). https://doi.org/10.1109/ECTC.2010.5490739