Tungsten as a CMOS compatible catalyst for the Metal-assisted Chemical Etching of silicon to create 2D and 3D nanostructures

Owen Hildreth; Carlos Alvarez; C. P. Wong

doi:10.1109/ECTC.2010.5490739

Tungsten as a CMOS compatible catalyst for the Metal-assisted Chemical Etching of silicon to create 2D and 3D nanostructures

Owen Hildreth, Carlos Alvarez, C. P. Wong

Arizona State University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

This paper demonstrates the use of tungsten as a viable, low cost catalyst for Metal-assisted Chemical Etching (MaCE) of silicon to create high aspect ratio nanostructures in silicon. The effect of etchant composition and etching time is reported along with Scanning Electron Microscope (SEM) and Atomic Force Microscopy (AFM) images confirming that tungsten acted as a catalyst for MaCE.

Original language	English (US)
Title of host publication	2010 Proceedings 60th Electronic Components and Technology Conference, ECTC 2010
Pages	794-797
Number of pages	4
DOIs	https://doi.org/10.1109/ECTC.2010.5490739
State	Published - Aug 9 2010
Event	60th Electronic Components and Technology Conference, ECTC 2010 - Las Vegas, NV, United States Duration: Jun 1 2010 → Jun 4 2010

Publication series

Name	Proceedings - Electronic Components and Technology Conference
ISSN (Print)	0569-5503

Other

Other	60th Electronic Components and Technology Conference, ECTC 2010
Country/Territory	United States
City	Las Vegas, NV
Period	6/1/10 → 6/4/10

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ECTC.2010.5490739

Cite this

Hildreth, O., Alvarez, C., & Wong, C. P. (2010). Tungsten as a CMOS compatible catalyst for the Metal-assisted Chemical Etching of silicon to create 2D and 3D nanostructures. In 2010 Proceedings 60th Electronic Components and Technology Conference, ECTC 2010 (pp. 794-797). Article 5490739 (Proceedings - Electronic Components and Technology Conference). https://doi.org/10.1109/ECTC.2010.5490739

Tungsten as a CMOS compatible catalyst for the Metal-assisted Chemical Etching of silicon to create 2D and 3D nanostructures. / Hildreth, Owen; Alvarez, Carlos; Wong, C. P.
2010 Proceedings 60th Electronic Components and Technology Conference, ECTC 2010. 2010. p. 794-797 5490739 (Proceedings - Electronic Components and Technology Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hildreth, O, Alvarez, C & Wong, CP 2010, Tungsten as a CMOS compatible catalyst for the Metal-assisted Chemical Etching of silicon to create 2D and 3D nanostructures. in 2010 Proceedings 60th Electronic Components and Technology Conference, ECTC 2010., 5490739, Proceedings - Electronic Components and Technology Conference, pp. 794-797, 60th Electronic Components and Technology Conference, ECTC 2010, Las Vegas, NV, United States, 6/1/10. https://doi.org/10.1109/ECTC.2010.5490739

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Tungsten as a CMOS compatible catalyst for the Metal-assisted Chemical Etching of silicon to create 2D and 3D nanostructures

Abstract

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