Tungsten as a CMOS compatible catalyst for the Metal-assisted Chemical Etching of silicon to create 2D and 3D nanostructures

Owen Hildreth, Carlos Alvarez, C. P. Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper demonstrates the use of tungsten as a viable, low cost catalyst for Metal-assisted Chemical Etching (MaCE) of silicon to create high aspect ratio nanostructures in silicon. The effect of etchant composition and etching time is reported along with Scanning Electron Microscope (SEM) and Atomic Force Microscopy (AFM) images confirming that tungsten acted as a catalyst for MaCE.

Original languageEnglish (US)
Title of host publicationProceedings - Electronic Components and Technology Conference
Pages794-797
Number of pages4
DOIs
StatePublished - 2010
Externally publishedYes
Event60th Electronic Components and Technology Conference, ECTC 2010 - Las Vegas, NV, United States
Duration: Jun 1 2010Jun 4 2010

Other

Other60th Electronic Components and Technology Conference, ECTC 2010
CountryUnited States
CityLas Vegas, NV
Period6/1/106/4/10

Fingerprint

Tungsten
Silicon
Etching
Nanostructures
Metals
Catalysts
Aspect ratio
Atomic force microscopy
Electron microscopes
Scanning
Chemical analysis
Costs

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Hildreth, O., Alvarez, C., & Wong, C. P. (2010). Tungsten as a CMOS compatible catalyst for the Metal-assisted Chemical Etching of silicon to create 2D and 3D nanostructures. In Proceedings - Electronic Components and Technology Conference (pp. 794-797). [5490739] https://doi.org/10.1109/ECTC.2010.5490739

Tungsten as a CMOS compatible catalyst for the Metal-assisted Chemical Etching of silicon to create 2D and 3D nanostructures. / Hildreth, Owen; Alvarez, Carlos; Wong, C. P.

Proceedings - Electronic Components and Technology Conference. 2010. p. 794-797 5490739.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hildreth, O, Alvarez, C & Wong, CP 2010, Tungsten as a CMOS compatible catalyst for the Metal-assisted Chemical Etching of silicon to create 2D and 3D nanostructures. in Proceedings - Electronic Components and Technology Conference., 5490739, pp. 794-797, 60th Electronic Components and Technology Conference, ECTC 2010, Las Vegas, NV, United States, 6/1/10. https://doi.org/10.1109/ECTC.2010.5490739
Hildreth O, Alvarez C, Wong CP. Tungsten as a CMOS compatible catalyst for the Metal-assisted Chemical Etching of silicon to create 2D and 3D nanostructures. In Proceedings - Electronic Components and Technology Conference. 2010. p. 794-797. 5490739 https://doi.org/10.1109/ECTC.2010.5490739
Hildreth, Owen ; Alvarez, Carlos ; Wong, C. P. / Tungsten as a CMOS compatible catalyst for the Metal-assisted Chemical Etching of silicon to create 2D and 3D nanostructures. Proceedings - Electronic Components and Technology Conference. 2010. pp. 794-797
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