Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys

V. R. D'Costa; Y. Y. Fang; J. Tolle; John Kouvetakis; Jose Menendez

doi:10.1103/PhysRevLett.102.107403

Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys

V. R. D'Costa, Y. Y. Fang, J. Tolle, John Kouvetakis, Jose Menendez

Research output: Contribution to journal › Article › peer-review

113 Scopus citations

Abstract

A direct absorption edge tunable between 0.8 and ∼1.4eV is demonstrated in strain-free ternary Ge1-x-ySixSny alloys epitaxially grown on Ge-buffered Si. This decoupling of electronic structure and lattice parameter-unprecedented in group-IV alloys-opens up new possibilities in silicon photonics, particularly in the field of photovoltaics. The compositional dependence of the direct band gap in Ge1-x-ySixSny exhibits a nonmonotonic behavior that is explained in terms of coexisting small and giant bowing parameters in the two-dimensional compositional space.

Original language	English (US)
Article number	107403
Journal	Physical Review Letters
Volume	102
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevLett.102.107403
State	Published - Mar 9 2009

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General Physics and Astronomy

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abstract = "A direct absorption edge tunable between 0.8 and ∼1.4eV is demonstrated in strain-free ternary Ge1-x-ySixSny alloys epitaxially grown on Ge-buffered Si. This decoupling of electronic structure and lattice parameter-unprecedented in group-IV alloys-opens up new possibilities in silicon photonics, particularly in the field of photovoltaics. The compositional dependence of the direct band gap in Ge1-x-ySixSny exhibits a nonmonotonic behavior that is explained in terms of coexisting small and giant bowing parameters in the two-dimensional compositional space.",

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AU - Tolle, J.

AU - Kouvetakis, John

AU - Menendez, Jose

PY - 2009/3/9

Y1 - 2009/3/9

N2 - A direct absorption edge tunable between 0.8 and ∼1.4eV is demonstrated in strain-free ternary Ge1-x-ySixSny alloys epitaxially grown on Ge-buffered Si. This decoupling of electronic structure and lattice parameter-unprecedented in group-IV alloys-opens up new possibilities in silicon photonics, particularly in the field of photovoltaics. The compositional dependence of the direct band gap in Ge1-x-ySixSny exhibits a nonmonotonic behavior that is explained in terms of coexisting small and giant bowing parameters in the two-dimensional compositional space.

AB - A direct absorption edge tunable between 0.8 and ∼1.4eV is demonstrated in strain-free ternary Ge1-x-ySixSny alloys epitaxially grown on Ge-buffered Si. This decoupling of electronic structure and lattice parameter-unprecedented in group-IV alloys-opens up new possibilities in silicon photonics, particularly in the field of photovoltaics. The compositional dependence of the direct band gap in Ge1-x-ySixSny exhibits a nonmonotonic behavior that is explained in terms of coexisting small and giant bowing parameters in the two-dimensional compositional space.

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Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys

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