Tunable band structure in diamond-cubic tin-germanium alloys grown on silicon substrates

Matthew R. Bauer; John Tolle; Corey Bungay; Andrew Chizmeshya; David Smith; Jose Menendez; John Kouvetakis

doi:10.1016/S0038-1098(03)00446-0

Tunable band structure in diamond-cubic tin-germanium alloys grown on silicon substrates

Matthew R. Bauer, John Tolle, Corey Bungay, Andrew Chizmeshya, David Smith, Jose Menendez, John Kouvetakis

Research output: Contribution to journal › Article › peer-review

64 Scopus citations

Abstract

Novel chemical methods based on deuterium-stabilized Sn hydrides and ultra-high-vacuum chemical vapor deposition were used to grow Sn_xGe_1-x alloys directly on silicon. Device-quality, strain-free films with a Sn-fraction as high as x = 0.2 were obtained. The optical properties provide evidence for a well-defined Ge-like band structure. In particular, the direct band gap E₀ is reduced to a value as low as 0.41 eV for Sn_0.14Ge_0.86. The growth of these high-optical quality infrared materials creates entirely new opportunities for band gap engineering on Si.

Original language	English (US)
Pages (from-to)	355-359
Number of pages	5
Journal	Solid State Communications
Volume	127
Issue number	5
DOIs	https://doi.org/10.1016/S0038-1098(03)00446-0
State	Published - Jul 2003

Keywords

A. Semiconductors
B. Epitaxy
C. Alloys

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/S0038-1098(03)00446-0

Cite this

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title = "Tunable band structure in diamond-cubic tin-germanium alloys grown on silicon substrates",

abstract = "Novel chemical methods based on deuterium-stabilized Sn hydrides and ultra-high-vacuum chemical vapor deposition were used to grow SnxGe1-x alloys directly on silicon. Device-quality, strain-free films with a Sn-fraction as high as x = 0.2 were obtained. The optical properties provide evidence for a well-defined Ge-like band structure. In particular, the direct band gap E0 is reduced to a value as low as 0.41 eV for Sn0.14Ge0.86. The growth of these high-optical quality infrared materials creates entirely new opportunities for band gap engineering on Si.",

keywords = "A. Semiconductors, B. Epitaxy, C. Alloys",

author = "Bauer, {Matthew R.} and John Tolle and Corey Bungay and Andrew Chizmeshya and David Smith and Jose Menendez and John Kouvetakis",

note = "Funding Information: This work was partially funded by the US National Science Foundation under Grants DMR-0221993 and the US-Army Research Office (DAAD19-00-0471). Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",

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doi = "10.1016/S0038-1098(03)00446-0",

language = "English (US)",

volume = "127",

pages = "355--359",

journal = "Solid State Communications",

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T1 - Tunable band structure in diamond-cubic tin-germanium alloys grown on silicon substrates

AU - Bauer, Matthew R.

AU - Tolle, John

AU - Bungay, Corey

AU - Chizmeshya, Andrew

AU - Smith, David

AU - Menendez, Jose

AU - Kouvetakis, John

N1 - Funding Information: This work was partially funded by the US National Science Foundation under Grants DMR-0221993 and the US-Army Research Office (DAAD19-00-0471). Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 2003/7

Y1 - 2003/7

N2 - Novel chemical methods based on deuterium-stabilized Sn hydrides and ultra-high-vacuum chemical vapor deposition were used to grow SnxGe1-x alloys directly on silicon. Device-quality, strain-free films with a Sn-fraction as high as x = 0.2 were obtained. The optical properties provide evidence for a well-defined Ge-like band structure. In particular, the direct band gap E0 is reduced to a value as low as 0.41 eV for Sn0.14Ge0.86. The growth of these high-optical quality infrared materials creates entirely new opportunities for band gap engineering on Si.

AB - Novel chemical methods based on deuterium-stabilized Sn hydrides and ultra-high-vacuum chemical vapor deposition were used to grow SnxGe1-x alloys directly on silicon. Device-quality, strain-free films with a Sn-fraction as high as x = 0.2 were obtained. The optical properties provide evidence for a well-defined Ge-like band structure. In particular, the direct band gap E0 is reduced to a value as low as 0.41 eV for Sn0.14Ge0.86. The growth of these high-optical quality infrared materials creates entirely new opportunities for band gap engineering on Si.

KW - A. Semiconductors

KW - B. Epitaxy

KW - C. Alloys

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JO - Solid State Communications

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Tunable band structure in diamond-cubic tin-germanium alloys grown on silicon substrates

Abstract

Keywords

ASJC Scopus subject areas

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