Triple-junction GaInP/GaAs/Ge solar cells-production status, qualification results and operational benefits

Jennifer E. Granata, James H. Ermer, Peter Hebert, Moran Haddad, Richard King, Dmitri D. Krut, James Lovelady, Mark S. Gillanders, Nasser H. Karam, B. Terence Cavicchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

17 Citations (Scopus)

Abstract

In 1999 Spectrolab completed design and qualification, and began production on the next generation of multijunction solar cell - a triple-junction GaInP/GaAs/Ge. With over 20% AM0 conversion efficiency at an operating temperature of 60°C, this cell provides 8-11% more power than competing dual-junction designs in GEO orbit after 15 years (6×1014 1-MeV electron equivalence). Spectrolab is currently qualifying an improved triple-junction cell capable of delivering over 22% AM0 conversion efficiency under these same conditions, with a beginning-of-life operating efficiency of 27%.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1181-1184
Number of pages4
Volume2000-January
ISBN (Print)0780357728
DOIs
StatePublished - 2000
Externally publishedYes
Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
Duration: Sep 15 2000Sep 22 2000

Other

Other28th IEEE Photovoltaic Specialists Conference, PVSC 2000
CountryUnited States
CityAnchorage
Period9/15/009/22/00

Fingerprint

Conversion efficiency
Solar cells
Orbits
Electrons
Temperature
Multi-junction solar cells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Granata, J. E., Ermer, J. H., Hebert, P., Haddad, M., King, R., Krut, D. D., ... Cavicchi, B. T. (2000). Triple-junction GaInP/GaAs/Ge solar cells-production status, qualification results and operational benefits. In Conference Record of the IEEE Photovoltaic Specialists Conference (Vol. 2000-January, pp. 1181-1184). [916099] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2000.916099

Triple-junction GaInP/GaAs/Ge solar cells-production status, qualification results and operational benefits. / Granata, Jennifer E.; Ermer, James H.; Hebert, Peter; Haddad, Moran; King, Richard; Krut, Dmitri D.; Lovelady, James; Gillanders, Mark S.; Karam, Nasser H.; Cavicchi, B. Terence.

Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. p. 1181-1184 916099.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Granata, JE, Ermer, JH, Hebert, P, Haddad, M, King, R, Krut, DD, Lovelady, J, Gillanders, MS, Karam, NH & Cavicchi, BT 2000, Triple-junction GaInP/GaAs/Ge solar cells-production status, qualification results and operational benefits. in Conference Record of the IEEE Photovoltaic Specialists Conference. vol. 2000-January, 916099, Institute of Electrical and Electronics Engineers Inc., pp. 1181-1184, 28th IEEE Photovoltaic Specialists Conference, PVSC 2000, Anchorage, United States, 9/15/00. https://doi.org/10.1109/PVSC.2000.916099
Granata JE, Ermer JH, Hebert P, Haddad M, King R, Krut DD et al. Triple-junction GaInP/GaAs/Ge solar cells-production status, qualification results and operational benefits. In Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January. Institute of Electrical and Electronics Engineers Inc. 2000. p. 1181-1184. 916099 https://doi.org/10.1109/PVSC.2000.916099
Granata, Jennifer E. ; Ermer, James H. ; Hebert, Peter ; Haddad, Moran ; King, Richard ; Krut, Dmitri D. ; Lovelady, James ; Gillanders, Mark S. ; Karam, Nasser H. ; Cavicchi, B. Terence. / Triple-junction GaInP/GaAs/Ge solar cells-production status, qualification results and operational benefits. Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. pp. 1181-1184
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