Triple-junction GaInP/GaAs/Ge solar cells-production status, qualification results and operational benefits

Jennifer E. Granata; James H. Ermer; Peter Hebert; Moran Haddad; Richard King; Dmitri D. Krut; James Lovelady; Mark S. Gillanders; Nasser H. Karam; B. Terence Cavicchi

doi:10.1109/PVSC.2000.916099

Triple-junction GaInP/GaAs/Ge solar cells-production status, qualification results and operational benefits

Jennifer E. Granata, James H. Ermer, Peter Hebert, Moran Haddad, Richard King, Dmitri D. Krut, James Lovelady, Mark S. Gillanders, Nasser H. Karam, B. Terence Cavicchi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

22 Scopus citations

Abstract

In 1999 Spectrolab completed design and qualification, and began production on the next generation of multijunction solar cell - a triple-junction GaInP/GaAs/Ge. With over 20% AM0 conversion efficiency at an operating temperature of 60°C, this cell provides 8-11% more power than competing dual-junction designs in GEO orbit after 15 years (6×10¹⁴ 1-MeV electron equivalence). Spectrolab is currently qualifying an improved triple-junction cell capable of delivering over 22% AM0 conversion efficiency under these same conditions, with a beginning-of-life operating efficiency of 27%.

Original language	English (US)
Title of host publication	Conference Record of the IEEE Photovoltaic Specialists Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1181-1184
Number of pages	4
Volume	2000-January
ISBN (Print)	0780357728
DOIs	https://doi.org/10.1109/PVSC.2000.916099
State	Published - 2000
Externally published	Yes
Event	28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States Duration: Sep 15 2000 → Sep 22 2000

Other

Other	28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Country/Territory	United States
City	Anchorage
Period	9/15/00 → 9/22/00

ASJC Scopus subject areas

Electrical and Electronic Engineering
Control and Systems Engineering
Industrial and Manufacturing Engineering

Access to Document

10.1109/PVSC.2000.916099

Cite this

Granata, J. E., Ermer, J. H., Hebert, P., Haddad, M., King, R., Krut, D. D., Lovelady, J., Gillanders, M. S., Karam, N. H., & Cavicchi, B. T. (2000). Triple-junction GaInP/GaAs/Ge solar cells-production status, qualification results and operational benefits. In Conference Record of the IEEE Photovoltaic Specialists Conference (Vol. 2000-January, pp. 1181-1184). Article 916099 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2000.916099

Triple-junction GaInP/GaAs/Ge solar cells-production status, qualification results and operational benefits. / Granata, Jennifer E.; Ermer, James H.; Hebert, Peter et al.
Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. p. 1181-1184 916099.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Granata, JE, Ermer, JH, Hebert, P, Haddad, M, King, R, Krut, DD, Lovelady, J, Gillanders, MS, Karam, NH & Cavicchi, BT 2000, Triple-junction GaInP/GaAs/Ge solar cells-production status, qualification results and operational benefits. in Conference Record of the IEEE Photovoltaic Specialists Conference. vol. 2000-January, 916099, Institute of Electrical and Electronics Engineers Inc., pp. 1181-1184, 28th IEEE Photovoltaic Specialists Conference, PVSC 2000, Anchorage, United States, 9/15/00. https://doi.org/10.1109/PVSC.2000.916099

Granata JE, Ermer JH, Hebert P, Haddad M, King R, Krut DD et al. Triple-junction GaInP/GaAs/Ge solar cells-production status, qualification results and operational benefits. In Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January. Institute of Electrical and Electronics Engineers Inc. 2000. p. 1181-1184. 916099 doi: 10.1109/PVSC.2000.916099

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title = "Triple-junction GaInP/GaAs/Ge solar cells-production status, qualification results and operational benefits",

abstract = "In 1999 Spectrolab completed design and qualification, and began production on the next generation of multijunction solar cell - a triple-junction GaInP/GaAs/Ge. With over 20% AM0 conversion efficiency at an operating temperature of 60°C, this cell provides 8-11% more power than competing dual-junction designs in GEO orbit after 15 years (6×1014 1-MeV electron equivalence). Spectrolab is currently qualifying an improved triple-junction cell capable of delivering over 22% AM0 conversion efficiency under these same conditions, with a beginning-of-life operating efficiency of 27%.",

author = "Granata, {Jennifer E.} and Ermer, {James H.} and Peter Hebert and Moran Haddad and Richard King and Krut, {Dmitri D.} and James Lovelady and Gillanders, {Mark S.} and Karam, {Nasser H.} and Cavicchi, {B. Terence}",

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AU - Granata, Jennifer E.

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AU - Krut, Dmitri D.

AU - Lovelady, James

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AB - In 1999 Spectrolab completed design and qualification, and began production on the next generation of multijunction solar cell - a triple-junction GaInP/GaAs/Ge. With over 20% AM0 conversion efficiency at an operating temperature of 60°C, this cell provides 8-11% more power than competing dual-junction designs in GEO orbit after 15 years (6×1014 1-MeV electron equivalence). Spectrolab is currently qualifying an improved triple-junction cell capable of delivering over 22% AM0 conversion efficiency under these same conditions, with a beginning-of-life operating efficiency of 27%.

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Triple-junction GaInP/GaAs/Ge solar cells-production status, qualification results and operational benefits

Abstract

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