Triple-gate fin field effect transistors with fin-thickness optimization to reduce the impact of fin line edge roughness

Shimeng Yu, Yuning Zhao, Gang Du, Jinfeng Kang, Ruqi Han, Xiaoyan Liu

Research output: Contribution to journalArticle

Abstract

Three-dimensional (3D) statistical simulation is presented to propose using triple-gate (TG) fin field effect transistors (FinFETs) with optimized fin-thickness (Tsi) to reduce the fin line edge roughness (LER) effect both in the device and circuit level. The results show that ultrathin fin will lead to intolerable parameter fluctuations in 20nm double-gate (DG) FinFETs and FinFETs static random access memory (SRAM). Increasing T si can alleviate fin LER effect, but in the meantime it will exacerbate the short channel effect (SCE). TG structure can strengthen the gate controllability over the channel, thus, can suppress SCE and reduce LER effect as well. Adopting TG structure can relax the constraint of fin-thickness to half the gate length.

Original languageEnglish (US)
Article number04C052
JournalJapanese Journal of Applied Physics
Volume48
Issue number4 PART 2
DOIs
StatePublished - Apr 2009
Externally publishedYes

Fingerprint

fins
Field effect transistors
roughness
field effect transistors
Surface roughness
optimization
Gates (transistor)
Controllability
Data storage equipment
Networks (circuits)
controllability
random access memory

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Triple-gate fin field effect transistors with fin-thickness optimization to reduce the impact of fin line edge roughness. / Yu, Shimeng; Zhao, Yuning; Du, Gang; Kang, Jinfeng; Han, Ruqi; Liu, Xiaoyan.

In: Japanese Journal of Applied Physics, Vol. 48, No. 4 PART 2, 04C052, 04.2009.

Research output: Contribution to journalArticle

Yu, Shimeng ; Zhao, Yuning ; Du, Gang ; Kang, Jinfeng ; Han, Ruqi ; Liu, Xiaoyan. / Triple-gate fin field effect transistors with fin-thickness optimization to reduce the impact of fin line edge roughness. In: Japanese Journal of Applied Physics. 2009 ; Vol. 48, No. 4 PART 2.
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