Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy

Takeyoshi Sugaya, Jonathan P. Bird, David K. Ferry, Kee Youn Jang, Mutsuo Ogura, Yoshinobu Sugiyama

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

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Engineering & Materials Science

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