Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy

Takeyoshi Sugaya, Jonathan P. Bird, David K. Ferry, Kee Youn Jang, Mutsuo Ogura, Yoshinobu Sugiyama

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

InGaAs trench-type quantum wires (QWR) were fabricated using hydrogen-assisted molecular beam epitaxy. The trench-type QWR-field effect transistor (FET) showed negative differential conductance (NDC) characteristics with a low onset voltage and a high peak-to-valley current ratio (PVR). The magnetoresistance of the QWR-FET showed different behavior to that typically exhibited by disordered wires. An Aharonov-Bohm effect was used to study the interference process in which the one-dimensional subbands of the wire constituted well-resolved paths for electron interference.

Original languageEnglish (US)
Pages (from-to)1192-1195
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number3
DOIs
StatePublished - May 2002

Fingerprint

Semiconductor quantum wires
Field effect transistors
quantum wires
Molecular beam epitaxy
molecular beam epitaxy
field effect transistors
Hydrogen
hydrogen
wire
Wire
interference
Magnetoresistance
low voltage
valleys
Electrons
Electric potential
electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy. / Sugaya, Takeyoshi; Bird, Jonathan P.; Ferry, David K.; Jang, Kee Youn; Ogura, Mutsuo; Sugiyama, Yoshinobu.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 3, 05.2002, p. 1192-1195.

Research output: Contribution to journalArticle

Sugaya, Takeyoshi ; Bird, Jonathan P. ; Ferry, David K. ; Jang, Kee Youn ; Ogura, Mutsuo ; Sugiyama, Yoshinobu. / Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2002 ; Vol. 20, No. 3. pp. 1192-1195.
@article{880c6f9f2c5648b98530cbce18f79549,
title = "Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy",
abstract = "InGaAs trench-type quantum wires (QWR) were fabricated using hydrogen-assisted molecular beam epitaxy. The trench-type QWR-field effect transistor (FET) showed negative differential conductance (NDC) characteristics with a low onset voltage and a high peak-to-valley current ratio (PVR). The magnetoresistance of the QWR-FET showed different behavior to that typically exhibited by disordered wires. An Aharonov-Bohm effect was used to study the interference process in which the one-dimensional subbands of the wire constituted well-resolved paths for electron interference.",
author = "Takeyoshi Sugaya and Bird, {Jonathan P.} and Ferry, {David K.} and Jang, {Kee Youn} and Mutsuo Ogura and Yoshinobu Sugiyama",
year = "2002",
month = "5",
doi = "10.1116/1.1456519",
language = "English (US)",
volume = "20",
pages = "1192--1195",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "3",

}

TY - JOUR

T1 - Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy

AU - Sugaya, Takeyoshi

AU - Bird, Jonathan P.

AU - Ferry, David K.

AU - Jang, Kee Youn

AU - Ogura, Mutsuo

AU - Sugiyama, Yoshinobu

PY - 2002/5

Y1 - 2002/5

N2 - InGaAs trench-type quantum wires (QWR) were fabricated using hydrogen-assisted molecular beam epitaxy. The trench-type QWR-field effect transistor (FET) showed negative differential conductance (NDC) characteristics with a low onset voltage and a high peak-to-valley current ratio (PVR). The magnetoresistance of the QWR-FET showed different behavior to that typically exhibited by disordered wires. An Aharonov-Bohm effect was used to study the interference process in which the one-dimensional subbands of the wire constituted well-resolved paths for electron interference.

AB - InGaAs trench-type quantum wires (QWR) were fabricated using hydrogen-assisted molecular beam epitaxy. The trench-type QWR-field effect transistor (FET) showed negative differential conductance (NDC) characteristics with a low onset voltage and a high peak-to-valley current ratio (PVR). The magnetoresistance of the QWR-FET showed different behavior to that typically exhibited by disordered wires. An Aharonov-Bohm effect was used to study the interference process in which the one-dimensional subbands of the wire constituted well-resolved paths for electron interference.

UR - http://www.scopus.com/inward/record.url?scp=0035998592&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035998592&partnerID=8YFLogxK

U2 - 10.1116/1.1456519

DO - 10.1116/1.1456519

M3 - Article

AN - SCOPUS:0035998592

VL - 20

SP - 1192

EP - 1195

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 3

ER -