Abstract
InGaAs trench-type quantum wires (QWR) were fabricated using hydrogen-assisted molecular beam epitaxy. The trench-type QWR-field effect transistor (FET) showed negative differential conductance (NDC) characteristics with a low onset voltage and a high peak-to-valley current ratio (PVR). The magnetoresistance of the QWR-FET showed different behavior to that typically exhibited by disordered wires. An Aharonov-Bohm effect was used to study the interference process in which the one-dimensional subbands of the wire constituted well-resolved paths for electron interference.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1192-1195 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 20 |
| Issue number | 3 |
| DOIs | |
| State | Published - May 1 2002 |
| Event | 20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States Duration: Oct 1 2001 → Oct 3 2001 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Sugaya, T., Bird, J. P., Ferry, D. K., Jang, K. Y., Ogura, M., & Sugiyama, Y. (2002). Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20(3), 1192-1195. https://doi.org/10.1116/1.1456519