Abstract
InGaAs trench-type quantum wires (QWR) were fabricated using hydrogen-assisted molecular beam epitaxy. The trench-type QWR-field effect transistor (FET) showed negative differential conductance (NDC) characteristics with a low onset voltage and a high peak-to-valley current ratio (PVR). The magnetoresistance of the QWR-FET showed different behavior to that typically exhibited by disordered wires. An Aharonov-Bohm effect was used to study the interference process in which the one-dimensional subbands of the wire constituted well-resolved paths for electron interference.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1192-1195 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 20 |
| Issue number | 3 |
| DOIs | |
| State | Published - May 2002 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Surfaces and Interfaces
- Physics and Astronomy (miscellaneous)
Cite this
Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy. / Sugaya, Takeyoshi; Bird, Jonathan P.; Ferry, David K.; Jang, Kee Youn; Ogura, Mutsuo; Sugiyama, Yoshinobu.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 3, 05.2002, p. 1192-1195.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy
AU - Sugaya, Takeyoshi
AU - Bird, Jonathan P.
AU - Ferry, David K.
AU - Jang, Kee Youn
AU - Ogura, Mutsuo
AU - Sugiyama, Yoshinobu
PY - 2002/5
Y1 - 2002/5
N2 - InGaAs trench-type quantum wires (QWR) were fabricated using hydrogen-assisted molecular beam epitaxy. The trench-type QWR-field effect transistor (FET) showed negative differential conductance (NDC) characteristics with a low onset voltage and a high peak-to-valley current ratio (PVR). The magnetoresistance of the QWR-FET showed different behavior to that typically exhibited by disordered wires. An Aharonov-Bohm effect was used to study the interference process in which the one-dimensional subbands of the wire constituted well-resolved paths for electron interference.
AB - InGaAs trench-type quantum wires (QWR) were fabricated using hydrogen-assisted molecular beam epitaxy. The trench-type QWR-field effect transistor (FET) showed negative differential conductance (NDC) characteristics with a low onset voltage and a high peak-to-valley current ratio (PVR). The magnetoresistance of the QWR-FET showed different behavior to that typically exhibited by disordered wires. An Aharonov-Bohm effect was used to study the interference process in which the one-dimensional subbands of the wire constituted well-resolved paths for electron interference.
UR - http://www.scopus.com/inward/record.url?scp=0035998592&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035998592&partnerID=8YFLogxK
U2 - 10.1116/1.1456519
DO - 10.1116/1.1456519
M3 - Article
AN - SCOPUS:0035998592
VL - 20
SP - 1192
EP - 1195
JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
SN - 1071-1023
IS - 3
ER -