Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy

Takeyoshi Sugaya; Jonathan P. Bird; David K. Ferry; Kee Youn Jang; Mutsuo Ogura; Yoshinobu Sugiyama

doi:10.1116/1.1456519

Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy

Takeyoshi Sugaya, Jonathan P. Bird, David K. Ferry, Kee Youn Jang, Mutsuo Ogura, Yoshinobu Sugiyama

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

InGaAs trench-type quantum wires (QWR) were fabricated using hydrogen-assisted molecular beam epitaxy. The trench-type QWR-field effect transistor (FET) showed negative differential conductance (NDC) characteristics with a low onset voltage and a high peak-to-valley current ratio (PVR). The magnetoresistance of the QWR-FET showed different behavior to that typically exhibited by disordered wires. An Aharonov-Bohm effect was used to study the interference process in which the one-dimensional subbands of the wire constituted well-resolved paths for electron interference.

Original language	English (US)
Pages (from-to)	1192-1195
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	3
DOIs	https://doi.org/10.1116/1.1456519
State	Published - May 2002
Event	20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States Duration: Oct 1 2001 → Oct 3 2001

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1456519

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Sugaya, T., Bird, J. P., Ferry, D. K., Jang, K. Y., Ogura, M., & Sugiyama, Y. (2002). Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20(3), 1192-1195. https://doi.org/10.1116/1.1456519

Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy. / Sugaya, Takeyoshi; Bird, Jonathan P.; Ferry, David K. et al.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 3, 05.2002, p. 1192-1195.

Research output: Contribution to journal › Conference article › peer-review

Sugaya, T, Bird, JP, Ferry, DK, Jang, KY, Ogura, M & Sugiyama, Y 2002, 'Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 20, no. 3, pp. 1192-1195. https://doi.org/10.1116/1.1456519

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abstract = "InGaAs trench-type quantum wires (QWR) were fabricated using hydrogen-assisted molecular beam epitaxy. The trench-type QWR-field effect transistor (FET) showed negative differential conductance (NDC) characteristics with a low onset voltage and a high peak-to-valley current ratio (PVR). The magnetoresistance of the QWR-FET showed different behavior to that typically exhibited by disordered wires. An Aharonov-Bohm effect was used to study the interference process in which the one-dimensional subbands of the wire constituted well-resolved paths for electron interference.",

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AU - Sugaya, Takeyoshi

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AU - Ferry, David K.

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AU - Ogura, Mutsuo

AU - Sugiyama, Yoshinobu

PY - 2002/5

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N2 - InGaAs trench-type quantum wires (QWR) were fabricated using hydrogen-assisted molecular beam epitaxy. The trench-type QWR-field effect transistor (FET) showed negative differential conductance (NDC) characteristics with a low onset voltage and a high peak-to-valley current ratio (PVR). The magnetoresistance of the QWR-FET showed different behavior to that typically exhibited by disordered wires. An Aharonov-Bohm effect was used to study the interference process in which the one-dimensional subbands of the wire constituted well-resolved paths for electron interference.

AB - InGaAs trench-type quantum wires (QWR) were fabricated using hydrogen-assisted molecular beam epitaxy. The trench-type QWR-field effect transistor (FET) showed negative differential conductance (NDC) characteristics with a low onset voltage and a high peak-to-valley current ratio (PVR). The magnetoresistance of the QWR-FET showed different behavior to that typically exhibited by disordered wires. An Aharonov-Bohm effect was used to study the interference process in which the one-dimensional subbands of the wire constituted well-resolved paths for electron interference.

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Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy

Abstract

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