Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy

Takeyoshi Sugaya, Jonathan P. Bird, David K. Ferry, Kee Youn Jang, Mutsuo Ogura, Yoshinobu Sugiyama

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

InGaAs trench-type quantum wires (QWR) were fabricated using hydrogen-assisted molecular beam epitaxy. The trench-type QWR-field effect transistor (FET) showed negative differential conductance (NDC) characteristics with a low onset voltage and a high peak-to-valley current ratio (PVR). The magnetoresistance of the QWR-FET showed different behavior to that typically exhibited by disordered wires. An Aharonov-Bohm effect was used to study the interference process in which the one-dimensional subbands of the wire constituted well-resolved paths for electron interference.

Original languageEnglish (US)
Pages (from-to)1192-1195
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number3
DOIs
StatePublished - May 1 2002
Event20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States
Duration: Oct 1 2001Oct 3 2001

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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