The effect of interface roughness on the operation of n-channel SOI MESFET device structure was investigated. The ensemble Monte Carlo (EMC) technique used was based upon the usual silicon band structure for three-dimensional electrons in three equivalent valleys. The Monte Carlo transport kernel gave the charge distribution in the device, and the successive over relaxation (SOR) method had been used for the solution of the 2D Poisson equation. The results suggests that the enhanced mobility in the device structure is expected to be in higher MESFET cut-off frequencies with application in rf micropower circuit design.
|Original language||English (US)|
|Number of pages||3|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Jul 2004|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering