TRAPPING OF INTERSTITIALS DURING ION IMPLANTATION IN SILICON.

R. J. Culbertson, S. J. Pennycook

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The solid phase epitaxial regrowth of silicon implanted with a group V dopant, such as antimony, results in excellent incorporation of the dopant atoms into silicon lattice sites. However, annealing at higher temperatures or longer times results in transient dopant precipitation with a diffusion coefficient up to five orders of magnitude above that of tracer diffusion and with a reduced activation energy. This precipitation is accompanied by the nucleation of dislocation loops that are interstitial in nature, and the transient ceases as the dislocation loops develop. It is believed that Si intersitials are trapped in a stable defect complex during the implantation process. Although they survive SPE these complexes dissolve at higher temperatures and release a large supply of interstitials which serve to promote dopant migration via an interstitialcy mechanism until they condense to form the observed dislocation loops. By following the Sb implantation with an implantation of B to an equivalent concentration profile the loop formation is efficiently suppressed. Results for As implantation are similar to Sb except that As precipitates can not be directly observed. Calculations of the dopant and interstitial concentration depth distributions were also performed.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherMaterials Research Soc
Pages357-362
Number of pages6
ISBN (Print)0931837162
StatePublished - Dec 1 1986
Externally publishedYes

Publication series

NameMaterials Research Society Symposia Proceedings
Volume51
ISSN (Print)0272-9172

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Culbertson, R. J., & Pennycook, S. J. (1986). TRAPPING OF INTERSTITIALS DURING ION IMPLANTATION IN SILICON. In Materials Research Society Symposia Proceedings (pp. 357-362). (Materials Research Society Symposia Proceedings; Vol. 51). Materials Research Soc.