Abstract
An approximation to the Maxwell-Semiconductor Bloch equations is used to model transverse mode dynamics of vertical-cavity surface-emitting lasers (VCSELs). The time-evolution of the spatial profiles of the laser field and carrier density is solved by a finite-difference algorithm. The algorithm is fairly general; it can handle devices of any shape, which are either gain or index guided or both. Also there is no a priori assumption about the type or number of modes. The physical modeling includes the nonlinear carrier dependence of the optical gain and refractive index and dispersion effects on the gain and the refractive index are also included. The modeling of the optical susceptibility is based on first-principles and includes device details such as the quantum well structures, and also includes many-body effects. Temporal dynamics as fast as on a picosecond scale can be resolved. The influences of the shape of the pumping region and of the index confinement on the transverse mode dynamics are investigated.
Original language | English (US) |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Publisher | Society of Photo-Optical Instrumentation Engineers |
Pages | 395-401 |
Number of pages | 7 |
Volume | 3625 |
State | Published - 1999 |
Externally published | Yes |
Event | Proceedings of the 1999 Physics and Simulation of Optoelectronic Devices VII - San Jose, CA, USA Duration: Jan 25 1999 → Jan 29 1999 |
Other
Other | Proceedings of the 1999 Physics and Simulation of Optoelectronic Devices VII |
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City | San Jose, CA, USA |
Period | 1/25/99 → 1/29/99 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics