@inproceedings{8a4f8d85a3f94a9a89ff127975ea32f9,
title = "Transport simulations of ultrashort planar doped barrier field effect transistors",
abstract = "We present a study of vertically-grown Si ultra-short FET's based on a new implementation of the Cellular Automata simulation. The probabilistic scattering rates for the electric field have been replaced in the cellular automaton by a new deterministic scattering rule in a fully three-dimensional momentum-discretization, leading to a significant suppression of statistical errors. We have also developed a fast multigrid/solver for the Poisson equation that offers the possibility to solve the Boltzmann and Poisson equations asynchronously in a multi-processor environment.",
author = "A. Rein and G. Zandler and M. Saraniti and P. Lugli and P. Vogl",
year = "1994",
month = jan,
day = "1",
language = "English (US)",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "775--778",
editor = "Peter Ashburn and Chris Hill",
booktitle = "European Solid-State Device Research Conference",
note = "24th European Solid State Device Research Conference, ESSDERC 1994 ; Conference date: 11-09-1994 Through 15-09-1994",
}