Transport simulations of ultrashort planar doped barrier field effect transistors

A. Rein, G. Zandler, M. Saraniti, P. Lugli, P. Vogl

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We present a study of vertically-grown Si ultra-short FET's based on a new implementation of the Cellular Automata simulation. The probabilistic scattering rates for the electric field have been replaced in the cellular automaton by a new deterministic scattering rule in a fully three-dimensional momentum-discretization, leading to a significant suppression of statistical errors. We have also developed a fast multigrid/solver for the Poisson equation that offers the possibility to solve the Boltzmann and Poisson equations asynchronously in a multi-processor environment.

Original languageEnglish (US)
Title of host publicationEuropean Solid-State Device Research Conference
EditorsPeter Ashburn, Chris Hill
PublisherIEEE Computer Society
Pages775-778
Number of pages4
ISBN (Electronic)2863321579
StatePublished - Jan 1 1994
Externally publishedYes
Event24th European Solid State Device Research Conference, ESSDERC 1994 - Edinburgh, United Kingdom
Duration: Sep 11 1994Sep 15 1994

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other24th European Solid State Device Research Conference, ESSDERC 1994
CountryUnited Kingdom
CityEdinburgh
Period9/11/949/15/94

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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