Transport properties of excitons in GaAs quantum wells-time-resolved Raman probe

Kong-Thon Tsen, O. F. Sankey, H. Morkoç

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Time-resolved, space-imaged Raman spectroscopy has been employed to study the transport properties of excitons in GaAs quantum wells. For an injected exciton density of nex approximately-equal-to 1.5×10 11 cm-2, the experimental results show that exciton transport can be well described by a simple diffusion model. Based on the temperature and well-width dependence of the deduced diffusion constant, we demonstrate that at low temperatures, i.e., T ≤60 K, the transport of excitons in GaAs quantum wells is primarily governed by two dominant mechanisms: acoustic phonon scattering and interface roughness scattering.

Original languageEnglish (US)
Pages (from-to)1666-1668
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number16
DOIs
StatePublished - 1990

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transport properties
excitons
quantum wells
probes
scattering
roughness
Raman spectroscopy
acoustics
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Transport properties of excitons in GaAs quantum wells-time-resolved Raman probe. / Tsen, Kong-Thon; Sankey, O. F.; Morkoç, H.

In: Applied Physics Letters, Vol. 57, No. 16, 1990, p. 1666-1668.

Research output: Contribution to journalArticle

Tsen, Kong-Thon ; Sankey, O. F. ; Morkoç, H. / Transport properties of excitons in GaAs quantum wells-time-resolved Raman probe. In: Applied Physics Letters. 1990 ; Vol. 57, No. 16. pp. 1666-1668.
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