Abstract
Time-resolved, space-imaged Raman spectroscopy has been employed to study the transport properties of excitons in GaAs quantum wells. For an injected exciton density of nex approximately-equal-to 1.5×10 11 cm-2, the experimental results show that exciton transport can be well described by a simple diffusion model. Based on the temperature and well-width dependence of the deduced diffusion constant, we demonstrate that at low temperatures, i.e., T ≤60 K, the transport of excitons in GaAs quantum wells is primarily governed by two dominant mechanisms: acoustic phonon scattering and interface roughness scattering.
Original language | English (US) |
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Pages (from-to) | 1666-1668 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 57 |
Issue number | 16 |
DOIs | |
State | Published - 1990 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)