Transport properties of excitons in GaAs quantum wells-time-resolved Raman probe

Kong-Thon Tsen, O. F. Sankey, H. Morkoç

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

Time-resolved, space-imaged Raman spectroscopy has been employed to study the transport properties of excitons in GaAs quantum wells. For an injected exciton density of nex approximately-equal-to 1.5×10 11 cm-2, the experimental results show that exciton transport can be well described by a simple diffusion model. Based on the temperature and well-width dependence of the deduced diffusion constant, we demonstrate that at low temperatures, i.e., T ≤60 K, the transport of excitons in GaAs quantum wells is primarily governed by two dominant mechanisms: acoustic phonon scattering and interface roughness scattering.

Original languageEnglish (US)
Pages (from-to)1666-1668
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number16
DOIs
StatePublished - Dec 1 1990

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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