TY - GEN
T1 - Transport properties of doped GeSn alloys
AU - D'Costa, Vijay R.
AU - Tolle, John
AU - Xie, Junqi
AU - Menendez, Jose
AU - Kouvetakis, John
PY - 2009
Y1 - 2009
N2 - We present a systematic study of the transport properties of n- and p-type Ge0.98Sn0.02 alloys using infrared spectroscopic ellipsometry and electrical measurements. We measure the dielectric function of our samples in the infrared range where the response is mainly due to free carrier absorption. In the case of p-type material, we observe, in addition to the free carrier response, optical transitions between split-off (SO), light (LH), and heavy-hole (HH) bands. The electron and hole mobilities for Ge 0.98Sn0.02 alloys with carrier concentrations >10 18cm-3 are comparable to those found in Ge samples with similar doping concentrations. The electron and hole effective masses of Ge 0.98Sn0.02 alloys are close to that of n-doped and p-doped Ge respectively.
AB - We present a systematic study of the transport properties of n- and p-type Ge0.98Sn0.02 alloys using infrared spectroscopic ellipsometry and electrical measurements. We measure the dielectric function of our samples in the infrared range where the response is mainly due to free carrier absorption. In the case of p-type material, we observe, in addition to the free carrier response, optical transitions between split-off (SO), light (LH), and heavy-hole (HH) bands. The electron and hole mobilities for Ge 0.98Sn0.02 alloys with carrier concentrations >10 18cm-3 are comparable to those found in Ge samples with similar doping concentrations. The electron and hole effective masses of Ge 0.98Sn0.02 alloys are close to that of n-doped and p-doped Ge respectively.
KW - Doped semiconductors
KW - Free carrier response
KW - Spectroscopic ellipsometry
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U2 - 10.1063/1.3295552
DO - 10.1063/1.3295552
M3 - Conference contribution
AN - SCOPUS:74849107280
SN - 9780735407367
T3 - AIP Conference Proceedings
SP - 57
EP - 58
BT - Physics of Semiconductors - 29th International Conference, ICPS 29
T2 - 29th International Conference on Physics of Semiconductors, ICPS 29
Y2 - 27 July 2008 through 1 August 2008
ER -