Transport properties of doped GeSn alloys

Vijay R. D'Costa, John Tolle, Junqi Xie, Jose Menendez, John Kouvetakis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

We present a systematic study of the transport properties of n- and p-type Ge0.98Sn0.02 alloys using infrared spectroscopic ellipsometry and electrical measurements. We measure the dielectric function of our samples in the infrared range where the response is mainly due to free carrier absorption. In the case of p-type material, we observe, in addition to the free carrier response, optical transitions between split-off (SO), light (LH), and heavy-hole (HH) bands. The electron and hole mobilities for Ge 0.98Sn0.02 alloys with carrier concentrations >10 18cm-3 are comparable to those found in Ge samples with similar doping concentrations. The electron and hole effective masses of Ge 0.98Sn0.02 alloys are close to that of n-doped and p-doped Ge respectively.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - 29th International Conference, ICPS 29
Pages57-58
Number of pages2
DOIs
StatePublished - Dec 1 2009
Event29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil
Duration: Jul 27 2008Aug 1 2008

Publication series

NameAIP Conference Proceedings
Volume1199
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other29th International Conference on Physics of Semiconductors, ICPS 29
CountryBrazil
CityRio de Janeiro
Period7/27/088/1/08

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Keywords

  • Doped semiconductors
  • Free carrier response
  • Spectroscopic ellipsometry

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

D'Costa, V. R., Tolle, J., Xie, J., Menendez, J., & Kouvetakis, J. (2009). Transport properties of doped GeSn alloys. In Physics of Semiconductors - 29th International Conference, ICPS 29 (pp. 57-58). (AIP Conference Proceedings; Vol. 1199). https://doi.org/10.1063/1.3295552