Transport of the photoexcited electron-hole plasma in GaAs quantum wells

Kong-Thon Tsen, O. F. Sankey, G. Halama, Shu Chen Y Tsen, H. Morkoc

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

We have examined the expansion of the photoexcited electron-hole plasma in GaAs quantum wells by using spatial and time-resolved Raman spectroscopy on a picosecond time scale and with approximately 2-m spatial resolution. The intersubband Raman signals associated with spin-density as well as charge-density fluctuations are employed to measure directly the carrier density as a function of the time delay and the distance from the excitation spot. For an injected plasma density of n1.5×1011 cm-2, the experimental results have shown that the in-plane ambipolar transport of the carriers in GaAs quantum wells can be very well described by a diffusion model and the thickness of the GaAs quantum well does not significantly influence lateral expansion of the plasma.

Original languageEnglish (US)
Pages (from-to)6276-6278
Number of pages3
JournalPhysical Review B
Volume39
Issue number9
DOIs
StatePublished - Jan 1 1989

ASJC Scopus subject areas

  • Condensed Matter Physics

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