TRANSPORT OF ELECTRONS IN SiO//2 AT HIGH ELECTRIC FIELDS.

D. K. Ferry

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

An iterative solution of the BTE has been used to calculate the transport properties of electrons at high fields in SiO//2, taking into account two polar-optical phonons and the electric-field induced modifications of the scattering rates.

Original languageEnglish (US)
Title of host publicationInst Phys Conf Ser
Place of PublicationLondon, Engl
PublisherInst of Phys
Pages801-804
Number of pages4
Edition43
StatePublished - 1979
Externally publishedYes
EventPap from the Int Conf on the Phys of Semicond, 14th - Edinburgh, Scotl
Duration: Sep 4 1978Sep 8 1978

Other

OtherPap from the Int Conf on the Phys of Semicond, 14th
CityEdinburgh, Scotl
Period9/4/789/8/78

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Ferry, D. K. (1979). TRANSPORT OF ELECTRONS IN SiO//2 AT HIGH ELECTRIC FIELDS. In Inst Phys Conf Ser (43 ed., pp. 801-804). Inst of Phys.